Abstract
Development efforts have been made on two heterojunctions with Zn3P2; namely, Zn3P2/ ZnSe and An3P2/ (CdZn)S. In both cases, improved open-circuit voltages were achieved, but control of the material properties of the heterojunction partner has limited short- circuit currents and overall efficiency. In the case of ZnSe, the high resistivities of deposited thin-films were efficiency-limiting on alldevices. In the case of (CdZn)S, it is concluded that high interface recombination rates are controlling the short-circuit current and limiting the overall efficiency. A more fundamental study of the Zn3P2/(CdAn)S heterojunction will be necessary in order to make further optimization of this device possible.
| Original language | American English |
|---|---|
| Publisher | National Laboratory of the Rockies (NLR) |
| Number of pages | 59 |
| State | Published - 1985 |
Bibliographical note
Work performed by Institute of Energy Conversion, University of Delaware, Newark, DelawareNLR Publication Number
- NREL/STR-211-2515
Keywords
- doped materials
- efficiency
- electric conductivity
- solar cells
- zinc phosphides
- zinc selenides
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