Zero Added Oxygen for High Quality Sputtered ITO: A Data Science Investigation of Reduced Sn-Content and Added Zr: Article No. 021201

James Burst; Timothy Coutts; Timothy Gessert; Timothy Peshek

doi:10.1116/1.4939830

Zero Added Oxygen for High Quality Sputtered ITO: A Data Science Investigation of Reduced Sn-Content and Added Zr: Article No. 021201

James Burst
, Timothy Coutts
, Timothy Gessert
, Timothy Peshek

Materials Science

Arizona State University

Research output: Contribution to journal › Article › peer-review

4 Scopus Citations

Original language	American English
Number of pages	10
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	34
Issue number	2
DOIs	https://doi.org/10.1116/1.4939830
State	Published - 2016

NLR Publication Number

NREL/JA-5K00-65866

Keywords

carrier density
electrical resistivity
high pressure
sputter deposition
thin films

Access to Document

10.1116/1.4939830

Cite this

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keywords = "carrier density, electrical resistivity, high pressure, sputter deposition, thin films",

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AU - Burst, James

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AU - Peshek, Timothy

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KW - carrier density

KW - electrical resistivity

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KW - sputter deposition

KW - thin films

U2 - 10.1116/1.4939830

DO - 10.1116/1.4939830

M3 - Article

SN - 0734-2101

VL - 34

JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

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