Wavelength and Pulse Duration Effects in Laser Scribing of Thin Films

doi:10.1109/PVSC.1997.654135

Wavelength and Pulse Duration Effects in Laser Scribing of Thin Films

NREL

Research output: Contribution to conference › Paper

Abstract

We have studied the performance of six different types of laser systems for scribing of the polycrystalline thin-film PV materials: ZnO, SnO2, CdTe, CIGS, Mo, and Si. The laser systems were KrF and XeCl excimer, copper vapor, quasi-cw Nd:YAG (both Q-switched and mode-locked), and flashlamp-pumped at Nd:YAG. The wavelengths were 248, 308, 511 & 578, 532, and 1064 nm. Pulses included a 250 ns longtrain of 0.1 ns pulses (mode-locked) and single pulses from 8 ns and 250 ns. The excimer lasers (KrF and XeCl) were found to give high quality scribes for all materials, including the transparent oxides, ZnO:Al and SnO2:F; however, vaporization rates were relatively low. Longer pulse durations (e.g., 90 ns) yielded higher rates of removal (up to 4 ..mu..m per J/cm2) for some materials. The highpulse energy available from the KrF laser allowed evaluation of beam delivery to a long narrow line which could eliminate the need for beam scanning and provide other advantages for scribing. We find that glass-side scribing, as opposed to film-side scribing, works well for Mo and CdTe films.

Original language	American English
Pages	491-494
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.1997.654135
State	Published - 1997
Event	Twenty Sixth IEEE Photovoltaic Specialists Conference - Anaheim, California Duration: 29 Sep 1997 → 3 Oct 1997

Conference

Conference	Twenty Sixth IEEE Photovoltaic Specialists Conference
City	Anaheim, California
Period	29/09/97 → 3/10/97

Bibliographical note

Work performed by University of Toledo, Toledo, Ohio

NLR Publication Number

NREL/CP-520-24974

Access to Document

10.1109/PVSC.1997.654135

Cite this

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title = "Wavelength and Pulse Duration Effects in Laser Scribing of Thin Films",

abstract = "We have studied the performance of six different types of laser systems for scribing of the polycrystalline thin-film PV materials: ZnO, SnO2, CdTe, CIGS, Mo, and Si. The laser systems were KrF and XeCl excimer, copper vapor, quasi-cw Nd:YAG (both Q-switched and mode-locked), and flashlamp-pumped at Nd:YAG. The wavelengths were 248, 308, 511 \& 578, 532, and 1064 nm. Pulses included a 250 ns longtrain of 0.1 ns pulses (mode-locked) and single pulses from 8 ns and 250 ns. The excimer lasers (KrF and XeCl) were found to give high quality scribes for all materials, including the transparent oxides, ZnO:Al and SnO2:F; however, vaporization rates were relatively low. Longer pulse durations (e.g., 90 ns) yielded higher rates of removal (up to 4 ..mu..m per J/cm2) for some materials. The highpulse energy available from the KrF laser allowed evaluation of beam delivery to a long narrow line which could eliminate the need for beam scanning and provide other advantages for scribing. We find that glass-side scribing, as opposed to film-side scribing, works well for Mo and CdTe films.",

author = "NREL",

note = "Work performed by University of Toledo, Toledo, Ohio; Twenty Sixth IEEE Photovoltaic Specialists Conference ; Conference date: 29-09-1997 Through 03-10-1997",

year = "1997",

doi = "10.1109/PVSC.1997.654135",

language = "American English",

pages = "491--494",

}

TY - CONF

T1 - Wavelength and Pulse Duration Effects in Laser Scribing of Thin Films

AU - NREL, null

N1 - Work performed by University of Toledo, Toledo, Ohio

PY - 1997

Y1 - 1997

N2 - We have studied the performance of six different types of laser systems for scribing of the polycrystalline thin-film PV materials: ZnO, SnO2, CdTe, CIGS, Mo, and Si. The laser systems were KrF and XeCl excimer, copper vapor, quasi-cw Nd:YAG (both Q-switched and mode-locked), and flashlamp-pumped at Nd:YAG. The wavelengths were 248, 308, 511 & 578, 532, and 1064 nm. Pulses included a 250 ns longtrain of 0.1 ns pulses (mode-locked) and single pulses from 8 ns and 250 ns. The excimer lasers (KrF and XeCl) were found to give high quality scribes for all materials, including the transparent oxides, ZnO:Al and SnO2:F; however, vaporization rates were relatively low. Longer pulse durations (e.g., 90 ns) yielded higher rates of removal (up to 4 ..mu..m per J/cm2) for some materials. The highpulse energy available from the KrF laser allowed evaluation of beam delivery to a long narrow line which could eliminate the need for beam scanning and provide other advantages for scribing. We find that glass-side scribing, as opposed to film-side scribing, works well for Mo and CdTe films.

AB - We have studied the performance of six different types of laser systems for scribing of the polycrystalline thin-film PV materials: ZnO, SnO2, CdTe, CIGS, Mo, and Si. The laser systems were KrF and XeCl excimer, copper vapor, quasi-cw Nd:YAG (both Q-switched and mode-locked), and flashlamp-pumped at Nd:YAG. The wavelengths were 248, 308, 511 & 578, 532, and 1064 nm. Pulses included a 250 ns longtrain of 0.1 ns pulses (mode-locked) and single pulses from 8 ns and 250 ns. The excimer lasers (KrF and XeCl) were found to give high quality scribes for all materials, including the transparent oxides, ZnO:Al and SnO2:F; however, vaporization rates were relatively low. Longer pulse durations (e.g., 90 ns) yielded higher rates of removal (up to 4 ..mu..m per J/cm2) for some materials. The highpulse energy available from the KrF laser allowed evaluation of beam delivery to a long narrow line which could eliminate the need for beam scanning and provide other advantages for scribing. We find that glass-side scribing, as opposed to film-side scribing, works well for Mo and CdTe films.

U2 - 10.1109/PVSC.1997.654135

DO - 10.1109/PVSC.1997.654135

M3 - Paper

SP - 491

EP - 494

T2 - Twenty Sixth IEEE Photovoltaic Specialists Conference

Y2 - 29 September 1997 through 3 October 1997

ER -

Wavelength and Pulse Duration Effects in Laser Scribing of Thin Films

Abstract

Conference

Bibliographical note

NLR Publication Number

Access to Document

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Cite this