Ultralong Minority-Carrier Lifetime Epitaxial GaAs by Photon Recycling

R. K. Ahrenkiel; D. J. Dunlavy; Brian Keyes; S. M. Vernon; T. M. Dixon; S. P. Tobin; K. L. Miller; R. E. Hayes

doi:10.1063/1.101713

Ultralong Minority-Carrier Lifetime Epitaxial GaAs by Photon Recycling

R. K. Ahrenkiel
, D. J. Dunlavy
, Brian Keyes
, S. M. Vernon
, T. M. Dixon
, S. P. Tobin
, K. L. Miller
, R. E. Hayes

National Renewable Energy Laboratory
Spire Corporation
University of Colorado Boulder

Research output: Contribution to journal › Article › peer-review

89 Scopus Citations

Abstract

The minority-carrier lifetime has been measured by time-resolved photoluminescence in epitaxial films of GaAs grown by metalorganic chemical vapor deposition. The measured lifetimes in thicker devices are 4 to 6 times the theoretical or radiative lifetime. These long lifetimes are the result of photon recycling or self-generation of the self-absorbed radiation.

Original language	American English
Pages (from-to)	1088-1090
Number of pages	3
Journal	Applied Physics Letters
Volume	55
Issue number	11
DOIs	https://doi.org/10.1063/1.101713 https://doi.org/10.1063/1.101713
State	Published - 1989

Bibliographical note

Work performed by Solar Energy Research Institute, Golden, Colorado; Spire Corporation, Bedford, Massachusetts; and University of Colorado, Boulder, Colorado

NLR Publication Number

ACNR/JA-213-11353

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Cite this

@article{48be8d2de2594d668d9074991135f5e9,

title = "Ultralong Minority-Carrier Lifetime Epitaxial GaAs by Photon Recycling",

abstract = "The minority-carrier lifetime has been measured by time-resolved photoluminescence in epitaxial films of GaAs grown by metalorganic chemical vapor deposition. The measured lifetimes in thicker devices are 4 to 6 times the theoretical or radiative lifetime. These long lifetimes are the result of photon recycling or self-generation of the self-absorbed radiation.",

author = "Ahrenkiel, \{R. K.\} and Dunlavy, \{D. J.\} and Brian Keyes and Vernon, \{S. M.\} and Dixon, \{T. M.\} and Tobin, \{S. P.\} and Miller, \{K. L.\} and Hayes, \{R. E.\}",

note = "Work performed by Solar Energy Research Institute, Golden, Colorado; Spire Corporation, Bedford, Massachusetts; and University of Colorado, Boulder, Colorado",

year = "1989",

doi = "10.1063/1.101713",

language = "American English",

volume = "55",

pages = "1088--1090",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "11",

}

TY - JOUR

T1 - Ultralong Minority-Carrier Lifetime Epitaxial GaAs by Photon Recycling

AU - Ahrenkiel, R. K.

AU - Dunlavy, D. J.

AU - Keyes, Brian

AU - Vernon, S. M.

AU - Dixon, T. M.

AU - Tobin, S. P.

AU - Miller, K. L.

AU - Hayes, R. E.

N1 - Work performed by Solar Energy Research Institute, Golden, Colorado; Spire Corporation, Bedford, Massachusetts; and University of Colorado, Boulder, Colorado

PY - 1989

Y1 - 1989

N2 - The minority-carrier lifetime has been measured by time-resolved photoluminescence in epitaxial films of GaAs grown by metalorganic chemical vapor deposition. The measured lifetimes in thicker devices are 4 to 6 times the theoretical or radiative lifetime. These long lifetimes are the result of photon recycling or self-generation of the self-absorbed radiation.

AB - The minority-carrier lifetime has been measured by time-resolved photoluminescence in epitaxial films of GaAs grown by metalorganic chemical vapor deposition. The measured lifetimes in thicker devices are 4 to 6 times the theoretical or radiative lifetime. These long lifetimes are the result of photon recycling or self-generation of the self-absorbed radiation.

UR - https://www.scopus.com/pages/publications/0012028282

U2 - 10.1063/1.101713

DO - 10.1063/1.101713

M3 - Article

AN - SCOPUS:0012028282

SN - 0003-6951

VL - 55

SP - 1088

EP - 1090

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

ER -

Ultralong Minority-Carrier Lifetime Epitaxial GaAs by Photon Recycling

Abstract

Bibliographical note

NLR Publication Number

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