Ultrafast Carrier Thermalization in Hydrogenated Amorphous Silicon

S. L. Dexheimer; C. P. Zhang; J. Liu; J. E. Young; B. P. Nelson

doi:10.1557/proc-715-a2.1

Ultrafast Carrier Thermalization in Hydrogenated Amorphous Silicon

S. L. Dexheimer
, C. P. Zhang
, J. Liu
, J. E. Young
, B. P. Nelson

Materials, Chemical, and Computational Science Research Operations

Washington State University Pullman

Research output: Contribution to conference › Paper › peer-review

9 Scopus Citations

Abstract

We present detailed studies of the initial relaxation processes of photoexcited carriers in hydrogenated amorphous silicon. We have carried out time-resolved measurements of the photoexcited carrier response in HWCVD a-Si:H thin films using a wavelength-resolved femtosecond pump-probe technique, in which an intense 35-fs pump pulse excites carriers in the sample and a time-delayed probe pulse measures the resulting change in optical properties as a function of time delay following the pump pulse. Measurements of the transient optical absorbance were carried out as a function of the density of excited carriers, sample temperature, and probe wavelength. These studies indicate fast carrier thermalization via phonon emission on a ∼150 fs time scale and rapid phonon equilibrium on a ∼230 fs time scale.

Original language	American English
Pages	269-274
Number of pages	6
DOIs	https://doi.org/10.1557/proc-715-a2.1
State	Published - 2002
Event	Amorphous and Heterogeneous Silicon-Based Films 2002: Materials Research Society Symposium - San Francisco, California Duration: 2 Apr 2002 → 5 Apr 2002

Conference

Conference	Amorphous and Heterogeneous Silicon-Based Films 2002: Materials Research Society Symposium
City	San Francisco, California
Period	2/04/02 → 5/04/02

NLR Publication Number

NREL/CP-520-34496

Access to Document

10.1557/proc-715-a2.1

Cite this

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title = "Ultrafast Carrier Thermalization in Hydrogenated Amorphous Silicon",

abstract = "We present detailed studies of the initial relaxation processes of photoexcited carriers in hydrogenated amorphous silicon. We have carried out time-resolved measurements of the photoexcited carrier response in HWCVD a-Si:H thin films using a wavelength-resolved femtosecond pump-probe technique, in which an intense 35-fs pump pulse excites carriers in the sample and a time-delayed probe pulse measures the resulting change in optical properties as a function of time delay following the pump pulse. Measurements of the transient optical absorbance were carried out as a function of the density of excited carriers, sample temperature, and probe wavelength. These studies indicate fast carrier thermalization via phonon emission on a ∼150 fs time scale and rapid phonon equilibrium on a ∼230 fs time scale.",

author = "Dexheimer, \{S. L.\} and Zhang, \{C. P.\} and J. Liu and Young, \{J. E.\} and Nelson, \{B. P.\}",

year = "2002",

doi = "10.1557/proc-715-a2.1",

language = "American English",

pages = "269--274",

note = "Amorphous and Heterogeneous Silicon-Based Films 2002: Materials Research Society Symposium ; Conference date: 02-04-2002 Through 05-04-2002",

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TY - CONF

T1 - Ultrafast Carrier Thermalization in Hydrogenated Amorphous Silicon

AU - Dexheimer, S. L.

AU - Zhang, C. P.

AU - Liu, J.

AU - Young, J. E.

AU - Nelson, B. P.

PY - 2002

Y1 - 2002

N2 - We present detailed studies of the initial relaxation processes of photoexcited carriers in hydrogenated amorphous silicon. We have carried out time-resolved measurements of the photoexcited carrier response in HWCVD a-Si:H thin films using a wavelength-resolved femtosecond pump-probe technique, in which an intense 35-fs pump pulse excites carriers in the sample and a time-delayed probe pulse measures the resulting change in optical properties as a function of time delay following the pump pulse. Measurements of the transient optical absorbance were carried out as a function of the density of excited carriers, sample temperature, and probe wavelength. These studies indicate fast carrier thermalization via phonon emission on a ∼150 fs time scale and rapid phonon equilibrium on a ∼230 fs time scale.

AB - We present detailed studies of the initial relaxation processes of photoexcited carriers in hydrogenated amorphous silicon. We have carried out time-resolved measurements of the photoexcited carrier response in HWCVD a-Si:H thin films using a wavelength-resolved femtosecond pump-probe technique, in which an intense 35-fs pump pulse excites carriers in the sample and a time-delayed probe pulse measures the resulting change in optical properties as a function of time delay following the pump pulse. Measurements of the transient optical absorbance were carried out as a function of the density of excited carriers, sample temperature, and probe wavelength. These studies indicate fast carrier thermalization via phonon emission on a ∼150 fs time scale and rapid phonon equilibrium on a ∼230 fs time scale.

UR - https://www.scopus.com/pages/publications/0036930174

U2 - 10.1557/proc-715-a2.1

DO - 10.1557/proc-715-a2.1

M3 - Paper

AN - SCOPUS:0036930174

SP - 269

EP - 274

T2 - Amorphous and Heterogeneous Silicon-Based Films 2002: Materials Research Society Symposium

Y2 - 2 April 2002 through 5 April 2002

ER -

Ultrafast Carrier Thermalization in Hydrogenated Amorphous Silicon

Abstract

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