Tuning Doping Site and Type by Strain: Enhanced p-type Doping in Li Doped ZnO

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NLR Publication Number

@article{4700e801cecc419a98ba4ef809de51a5,

title = "Tuning Doping Site and Type by Strain: Enhanced p-type Doping in Li Doped ZnO",

keywords = "high pressure, impurities in semiconductors, semiconductors, strain",

author = "Junyi Zhu and Suhuai Wei",

year = "2011",

doi = "10.1016/j.ssc.2011.07.003",

language = "American English",

volume = "151",

pages = "1437--1439",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Ltd.",

number = "20",

}

TY - JOUR

T1 - Tuning Doping Site and Type by Strain: Enhanced p-type Doping in Li Doped ZnO

AU - Zhu, Junyi

AU - Wei, Suhuai

PY - 2011

Y1 - 2011

KW - high pressure

KW - impurities in semiconductors

KW - semiconductors

KW - strain

U2 - 10.1016/j.ssc.2011.07.003

DO - 10.1016/j.ssc.2011.07.003

M3 - Article

SN - 0038-1098

VL - 151

SP - 1437

EP - 1439

JO - Solid State Communications

JF - Solid State Communications

IS - 20

ER -