Transmission Electron Microscopy Study of the Effect of Selenium Doping on the Ordering of GaInP2

J. P. Goral; Sarah R. Kurtz; J. M. Olson; A. Kibbler

doi:10.1007/BF02655555

Transmission Electron Microscopy Study of the Effect of Selenium Doping on the Ordering of GaInP2

J. P. Goral
, Sarah R. Kurtz
, J. M. Olson
, A. Kibbler

Materials Science

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

26 Scopus Citations

Abstract

Selenium doped Ga_0.51In_0.49P films have been grown by metalorganic chemical vapour deposition at 600, 670 and 740° C. The extent of ordering of the Group III sublattice has been monitored by transmission electron microscopy. Ordering disappears at carrier concentrations on the order of 10¹⁸ cm^-3 for samples grown at 600 and 740° C although a small degree of ordering persists in the samples grown at 670° C up to a carrier concentration of 10¹⁹ cm^-3. At each growth temperature, the ordering observed decreased and the bandgap measured increased with increasing Se doping.

Original language	American English
Pages (from-to)	95-99
Number of pages	5
Journal	Journal of Electronic Materials
Volume	19
Issue number	1
DOIs	https://doi.org/10.1007/BF02655555 https://doi.org/10.1007/BF02655555
State	Published - Jan 1990

NLR Publication Number

ACNR/JA-213-11545

Keywords

GaInP
MOCVD
ordering

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title = "Transmission Electron Microscopy Study of the Effect of Selenium Doping on the Ordering of GaInP2",

abstract = "Selenium doped Ga0.51In0.49P films have been grown by metalorganic chemical vapour deposition at 600, 670 and 740° C. The extent of ordering of the Group III sublattice has been monitored by transmission electron microscopy. Ordering disappears at carrier concentrations on the order of 1018 cm-3 for samples grown at 600 and 740° C although a small degree of ordering persists in the samples grown at 670° C up to a carrier concentration of 1019 cm-3. At each growth temperature, the ordering observed decreased and the bandgap measured increased with increasing Se doping.",

keywords = "GaInP, MOCVD, ordering",

author = "Goral, \{J. P.\} and Kurtz, \{Sarah R.\} and Olson, \{J. M.\} and A. Kibbler",

year = "1990",

month = jan,

doi = "10.1007/BF02655555",

language = "American English",

volume = "19",

pages = "95--99",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

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T1 - Transmission Electron Microscopy Study of the Effect of Selenium Doping on the Ordering of GaInP2

AU - Goral, J. P.

AU - Kurtz, Sarah R.

AU - Olson, J. M.

AU - Kibbler, A.

PY - 1990/1

Y1 - 1990/1

N2 - Selenium doped Ga0.51In0.49P films have been grown by metalorganic chemical vapour deposition at 600, 670 and 740° C. The extent of ordering of the Group III sublattice has been monitored by transmission electron microscopy. Ordering disappears at carrier concentrations on the order of 1018 cm-3 for samples grown at 600 and 740° C although a small degree of ordering persists in the samples grown at 670° C up to a carrier concentration of 1019 cm-3. At each growth temperature, the ordering observed decreased and the bandgap measured increased with increasing Se doping.

AB - Selenium doped Ga0.51In0.49P films have been grown by metalorganic chemical vapour deposition at 600, 670 and 740° C. The extent of ordering of the Group III sublattice has been monitored by transmission electron microscopy. Ordering disappears at carrier concentrations on the order of 1018 cm-3 for samples grown at 600 and 740° C although a small degree of ordering persists in the samples grown at 670° C up to a carrier concentration of 1019 cm-3. At each growth temperature, the ordering observed decreased and the bandgap measured increased with increasing Se doping.

KW - GaInP

KW - MOCVD

KW - ordering

UR - https://www.scopus.com/pages/publications/0025249447

U2 - 10.1007/BF02655555

DO - 10.1007/BF02655555

M3 - Article

AN - SCOPUS:0025249447

SN - 0361-5235

VL - 19

SP - 95

EP - 99

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 1

ER -

Transmission Electron Microscopy Study of the Effect of Selenium Doping on the Ordering of GaInP2

Abstract

NLR Publication Number

Keywords

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