Towards High-Efficiency GaAsP/Si Tandem Cells

S. Fan; M. Vaisman; K. Yaung; D. Martin-Martin; M. Leilaeioun; Z. Holman; M. Lee

doi:10.1109/PVSC.2017.8366555

Towards High-Efficiency GaAsP/Si Tandem Cells

S. Fan
, M. Vaisman
, K. Yaung
, D. Martin-Martin
, M. Leilaeioun
, Z. Holman
, M. Lee

Chemistry and Nanoscience

University of Illinois at Urbana-Champaign
Yale University
King Juan Carlos University
Arizona State University

Research output: Contribution to conference › Paper

2 Scopus Citations

Abstract

In this work, we present recent progress towards high-efficiency epitaxial 1.7 eV/1.1 eV GaAsP/Si tandem cells. First, we present Si bottom cells with thick, epitaxial n-GaAsP optical filtering layers, yielding an efficiency of 6.25%. Furthermore, we demonstrate GaAsP/Si 2-terminal tandem cells with Voc of 1.596 V using an unoptimized tunnel junction to interconnect the GaAsP and Si sub-cells. Finally, we discuss the design of SiNx/SiOx double-layer anti-reflectance coating (ARC) for GaAsP/Si tandem cells, which boosted the Jsc by 28.9%.

Original language	American English
Pages	3376-3380
Number of pages	5
DOIs	https://doi.org/10.1109/PVSC.2017.8366555
State	Published - 2018
Event	2017 IEEE 44th Photovoltaic Specialist Conference (PVSC) - Washington, D.C. Duration: 25 Jun 2017 → 30 Jun 2017

Conference

Conference	2017 IEEE 44th Photovoltaic Specialist Conference (PVSC)
City	Washington, D.C.
Period	25/06/17 → 30/06/17

NLR Publication Number

NREL/CP-5900-73950

Keywords

back contact
computer simulation
photovoltaic cells
silicon

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10.1109/PVSC.2017.8366555

Cite this

@conference{b84b6fb546ef44b9bcf791b68ef17613,

title = "Towards High-Efficiency GaAsP/Si Tandem Cells",

abstract = "In this work, we present recent progress towards high-efficiency epitaxial 1.7 eV/1.1 eV GaAsP/Si tandem cells. First, we present Si bottom cells with thick, epitaxial n-GaAsP optical filtering layers, yielding an efficiency of 6.25\%. Furthermore, we demonstrate GaAsP/Si 2-terminal tandem cells with Voc of 1.596 V using an unoptimized tunnel junction to interconnect the GaAsP and Si sub-cells. Finally, we discuss the design of SiNx/SiOx double-layer anti-reflectance coating (ARC) for GaAsP/Si tandem cells, which boosted the Jsc by 28.9\%.",

keywords = "back contact, computer simulation, photovoltaic cells, silicon",

author = "S. Fan and M. Vaisman and K. Yaung and D. Martin-Martin and M. Leilaeioun and Z. Holman and M. Lee",

year = "2018",

doi = "10.1109/PVSC.2017.8366555",

language = "American English",

pages = "3376--3380",

note = "2017 IEEE 44th Photovoltaic Specialist Conference (PVSC) ; Conference date: 25-06-2017 Through 30-06-2017",

}

TY - CONF

T1 - Towards High-Efficiency GaAsP/Si Tandem Cells

AU - Fan, S.

AU - Vaisman, M.

AU - Yaung, K.

AU - Martin-Martin, D.

AU - Leilaeioun, M.

AU - Holman, Z.

AU - Lee, M.

PY - 2018

Y1 - 2018

N2 - In this work, we present recent progress towards high-efficiency epitaxial 1.7 eV/1.1 eV GaAsP/Si tandem cells. First, we present Si bottom cells with thick, epitaxial n-GaAsP optical filtering layers, yielding an efficiency of 6.25%. Furthermore, we demonstrate GaAsP/Si 2-terminal tandem cells with Voc of 1.596 V using an unoptimized tunnel junction to interconnect the GaAsP and Si sub-cells. Finally, we discuss the design of SiNx/SiOx double-layer anti-reflectance coating (ARC) for GaAsP/Si tandem cells, which boosted the Jsc by 28.9%.

AB - In this work, we present recent progress towards high-efficiency epitaxial 1.7 eV/1.1 eV GaAsP/Si tandem cells. First, we present Si bottom cells with thick, epitaxial n-GaAsP optical filtering layers, yielding an efficiency of 6.25%. Furthermore, we demonstrate GaAsP/Si 2-terminal tandem cells with Voc of 1.596 V using an unoptimized tunnel junction to interconnect the GaAsP and Si sub-cells. Finally, we discuss the design of SiNx/SiOx double-layer anti-reflectance coating (ARC) for GaAsP/Si tandem cells, which boosted the Jsc by 28.9%.

KW - back contact

KW - computer simulation

KW - photovoltaic cells

KW - silicon

U2 - 10.1109/PVSC.2017.8366555

DO - 10.1109/PVSC.2017.8366555

M3 - Paper

SP - 3376

EP - 3380

T2 - 2017 IEEE 44th Photovoltaic Specialist Conference (PVSC)

Y2 - 25 June 2017 through 30 June 2017

ER -

Towards High-Efficiency GaAsP/Si Tandem Cells

Abstract

Conference

NLR Publication Number

Keywords

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