Thin Polycrystalline Silicon Films by HWCVD

Thin Polycrystalline Silicon Films by HWCVD

NREL

Research output: Contribution to conference › Paper

Abstract

Thin polycrystalline silicon films with grain sizes between 10 to 50 nm and having (220) preferred orientation were deposited from pure silane onto 7059 Corning glass and crystalline silicon substrates by Hot-Wire Chemical Vapor Deposition (HWCVD). The effect of processing parameters, such as substrate temperature, silane flowrate and pressure, on the film properties, crystalline fraction andgrowth rate was investigated. The crystalline fraction was found to depend on the gas phase chemistry and substrate temperature at wire temperatures above 1815 deg. C.

Original language	American English
Pages	152-155
Number of pages	4
State	Published - 1999
Event	Ninth Workshop on Crystalline Silicon Solar Cell Materials and Processes - Breckenridge, Colorado Duration: 9 Aug 1999 → 11 Aug 1999

Conference

Conference	Ninth Workshop on Crystalline Silicon Solar Cell Materials and Processes
City	Breckenridge, Colorado
Period	9/08/99 → 11/08/99

Bibliographical note

Work performed by University of Delaware, Newark, Delaware

NLR Publication Number

NREL/CP-27190

Cite this

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title = "Thin Polycrystalline Silicon Films by HWCVD",

abstract = "Thin polycrystalline silicon films with grain sizes between 10 to 50 nm and having (220) preferred orientation were deposited from pure silane onto 7059 Corning glass and crystalline silicon substrates by Hot-Wire Chemical Vapor Deposition (HWCVD). The effect of processing parameters, such as substrate temperature, silane flowrate and pressure, on the film properties, crystalline fraction andgrowth rate was investigated. The crystalline fraction was found to depend on the gas phase chemistry and substrate temperature at wire temperatures above 1815 deg. C.",

author = "NREL",

note = "Work performed by University of Delaware, Newark, Delaware; Ninth Workshop on Crystalline Silicon Solar Cell Materials and Processes ; Conference date: 09-08-1999 Through 11-08-1999",

year = "1999",

language = "American English",

pages = "152--155",

}

TY - CONF

T1 - Thin Polycrystalline Silicon Films by HWCVD

AU - NREL, null

N1 - Work performed by University of Delaware, Newark, Delaware

PY - 1999

Y1 - 1999

N2 - Thin polycrystalline silicon films with grain sizes between 10 to 50 nm and having (220) preferred orientation were deposited from pure silane onto 7059 Corning glass and crystalline silicon substrates by Hot-Wire Chemical Vapor Deposition (HWCVD). The effect of processing parameters, such as substrate temperature, silane flowrate and pressure, on the film properties, crystalline fraction andgrowth rate was investigated. The crystalline fraction was found to depend on the gas phase chemistry and substrate temperature at wire temperatures above 1815 deg. C.

AB - Thin polycrystalline silicon films with grain sizes between 10 to 50 nm and having (220) preferred orientation were deposited from pure silane onto 7059 Corning glass and crystalline silicon substrates by Hot-Wire Chemical Vapor Deposition (HWCVD). The effect of processing parameters, such as substrate temperature, silane flowrate and pressure, on the film properties, crystalline fraction andgrowth rate was investigated. The crystalline fraction was found to depend on the gas phase chemistry and substrate temperature at wire temperatures above 1815 deg. C.

M3 - Paper

SP - 152

EP - 155

T2 - Ninth Workshop on Crystalline Silicon Solar Cell Materials and Processes

Y2 - 9 August 1999 through 11 August 1999

ER -

Thin Polycrystalline Silicon Films by HWCVD

Abstract

Conference

Bibliographical note

NLR Publication Number

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Cite this