Thin Film Si Bottom Cells for Tandem Device Structures: Final Technical Report, 15 December 2003 - 15 October 2007

V. Yelundur; A. Rohatgi; S. Hegedus; R. Birkmire

Thin Film Si Bottom Cells for Tandem Device Structures: Final Technical Report, 15 December 2003 - 15 October 2007

V. Yelundur
, A. Rohatgi
, S. Hegedus
, R. Birkmire

Georgia Institute of Technology
University of Delaware

Research output: NLR › Subcontract Report

Abstract

GIT and IEC developed thin-film Si bottom cell and showed that deposition of top cell in tandem device did not reduce bottom cell performance.

Original language	American English
Publisher	National Laboratory of the Rockies (NLR)
Number of pages	34
State	Published - 2008

Bibliographical note

Work performed by Georgia Institute of Technology, Atlanta, Georgia and University of Delaware, Newark, Delaware

NLR Publication Number

NREL/SR-520-44380

Keywords

bottom cell
device fabrication
high-efficiency
hot-wire chemical vapor deposition (HWCVD)
PV
short circuit current (ISC)
silicon
solar cells
tandem devices
thin film

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title = "Thin Film Si Bottom Cells for Tandem Device Structures: Final Technical Report, 15 December 2003 - 15 October 2007",

abstract = "GIT and IEC developed thin-film Si bottom cell and showed that deposition of top cell in tandem device did not reduce bottom cell performance.",

keywords = "bottom cell, device fabrication, high-efficiency, hot-wire chemical vapor deposition (HWCVD), PV, short circuit current (ISC), silicon, solar cells, tandem devices, thin film",

author = "V. Yelundur and A. Rohatgi and S. Hegedus and R. Birkmire",

note = "Work performed by Georgia Institute of Technology, Atlanta, Georgia and University of Delaware, Newark, Delaware",

year = "2008",

language = "American English",

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T1 - Thin Film Si Bottom Cells for Tandem Device Structures: Final Technical Report, 15 December 2003 - 15 October 2007

AU - Yelundur, V.

AU - Rohatgi, A.

AU - Hegedus, S.

AU - Birkmire, R.

N1 - Work performed by Georgia Institute of Technology, Atlanta, Georgia and University of Delaware, Newark, Delaware

PY - 2008

Y1 - 2008

N2 - GIT and IEC developed thin-film Si bottom cell and showed that deposition of top cell in tandem device did not reduce bottom cell performance.

AB - GIT and IEC developed thin-film Si bottom cell and showed that deposition of top cell in tandem device did not reduce bottom cell performance.

KW - bottom cell

KW - device fabrication

KW - high-efficiency

KW - hot-wire chemical vapor deposition (HWCVD)

KW - PV

KW - short circuit current (ISC)

KW - silicon

KW - solar cells

KW - tandem devices

KW - thin film

M3 - Subcontract Report

PB - National Laboratory of the Rockies (NLR)

ER -

Thin Film Si Bottom Cells for Tandem Device Structures: Final Technical Report, 15 December 2003 - 15 October 2007

Abstract

Bibliographical note

NLR Publication Number

Keywords

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