Abstract
Using photoluminescence spectroscopy, we construct a recombination model for state-of-the-art CdTe solar cells doped with Cu. We observe that Cu on Cd sites form a dominant acceptor state about 150 meV from the valence band. Although it is intuitive that this state can increase hole density, we also find that this relatively shallow dopant can also limit lifetime. Consequently, CdTe solar cells doped with Cu could have a lifetime limitation inversely proportional to the hole concentration.
| Original language | American English |
|---|---|
| Article number | Article No. 243906 |
| Number of pages | 5 |
| Journal | Applied Physics Letters |
| Volume | 107 |
| Issue number | 24 |
| DOIs | |
| State | Published - 14 Dec 2015 |
Bibliographical note
Publisher Copyright:© 2015 AIP Publishing LLC.
NLR Publication Number
- NREL/JA-5900-65705
Keywords
- doping
- electron densities of states
- III-VI semiconductors
- photoluminescence
- solar cells
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