Temperature-Dependent Carrier Lifetime in GaNAs Using Resonant-Coupled Photoconductive Decay: Preprint

Temperature-Dependent Carrier Lifetime in GaNAs Using Resonant-Coupled Photoconductive Decay: Preprint

NREL

Research output: Contribution to conference › Paper

Abstract

Presented at the 2001 NCPV Program Review Meeting: Temp-dependent lifetime measurements can further characterize trapping and recombination. We did lifetime measurements on GaNAs/GaAs using photoconductive decay technique.

Original language	American English
Number of pages	4
State	Published - 2001
Event	NCPV Program Review Meeting - Lakewood, Colorado Duration: 14 Oct 2001 → 17 Oct 2001

Conference

Conference	NCPV Program Review Meeting
City	Lakewood, Colorado
Period	14/10/01 → 17/10/01

NLR Publication Number

NREL/CP-520-31033

Keywords

carrier lifetime
GaNAs/GaAs
NCPV
photoconductive decay (PCD)
PV
recombination
temperature dependence
trapping

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title = "Temperature-Dependent Carrier Lifetime in GaNAs Using Resonant-Coupled Photoconductive Decay: Preprint",

abstract = "Presented at the 2001 NCPV Program Review Meeting: Temp-dependent lifetime measurements can further characterize trapping and recombination. We did lifetime measurements on GaNAs/GaAs using photoconductive decay technique.",

keywords = "carrier lifetime, GaNAs/GaAs, NCPV, photoconductive decay (PCD), PV, recombination, temperature dependence, trapping",

author = "NREL",

year = "2001",

language = "American English",

note = "NCPV Program Review Meeting ; Conference date: 14-10-2001 Through 17-10-2001",

}

TY - CONF

T1 - Temperature-Dependent Carrier Lifetime in GaNAs Using Resonant-Coupled Photoconductive Decay: Preprint

AU - NREL, null

PY - 2001

Y1 - 2001

N2 - Presented at the 2001 NCPV Program Review Meeting: Temp-dependent lifetime measurements can further characterize trapping and recombination. We did lifetime measurements on GaNAs/GaAs using photoconductive decay technique.

AB - Presented at the 2001 NCPV Program Review Meeting: Temp-dependent lifetime measurements can further characterize trapping and recombination. We did lifetime measurements on GaNAs/GaAs using photoconductive decay technique.

KW - carrier lifetime

KW - GaNAs/GaAs

KW - NCPV

KW - photoconductive decay (PCD)

KW - PV

KW - recombination

KW - temperature dependence

KW - trapping

M3 - Paper

T2 - NCPV Program Review Meeting

Y2 - 14 October 2001 through 17 October 2001

ER -

Temperature-Dependent Carrier Lifetime in GaNAs Using Resonant-Coupled Photoconductive Decay: Preprint

Abstract

Conference

NLR Publication Number

Keywords

Access to Document

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Cite this