Temperature Dependence of Nonradiative Recombination in Low-Band Gap InxGa1-xAs/InAsyP1-y Double Heterostructures Grown on InP Substrates

Research output: Contribution to journal › Article › peer-review

NLR Publication Number

@article{83de7cf816e6408e83f2a6aca910b731,

title = "Temperature Dependence of Nonradiative Recombination in Low-Band Gap InxGa1-xAs/InAsyP1-y Double Heterostructures Grown on InP Substrates",

author = "NREL",

year = "2003",

doi = "10.1063/1.1586468",

language = "American English",

volume = "94",

pages = "1738--1743",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "3",

}