Abstract
Solar cells have been fabricated with partial electrolyte treatments of CuInGaSe2 (CIGS) thin film absorbers in lieu of a CdS layer. Treatment of the absorbers in a Cd or Zn containing solution is shown to produce conditions under which efficient solar cells can be fabricated. A similar effect is also observed in CuInGaSSe2 (CIGSS) graded band gap absorbers. These observations can be explained by the ability of Cd and Zn to produce n-type doping or inversion in the surface region. We also provide a brief review of similar work done elsewhere and identify directions for future investigations.
| Original language | American English |
|---|---|
| Pages (from-to) | 1495-1498 |
| Number of pages | 4 |
| Journal | Journal of Physics and Chemistry of Solids |
| Volume | 64 |
| Issue number | 9-10 |
| DOIs | |
| State | Published - 2003 |
Bibliographical note
For preprint version, including full text online document, see NREL/CP-520-32950NLR Publication Number
- NREL/JA-520-35475
Keywords
- A. Thin films
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