Skip to main navigation Skip to search Skip to main content

Superior Radiation Resistance of In1-xGaxN Alloys: a Full-Solar-Spectrum Photovoltaic Material System

  • J. Wu
  • , W. Walukiewicz
  • , K. M. Yu
  • , W. Shan
  • , J. W. Ager
  • , E. E. Haller
  • , Hai Lu
  • , William J. Schaff
  • , W. K. Metzger
  • , Sarah Kurtz
  • Lawrence Berkeley National Laboratory
  • University of California at Berkeley
  • Cornell University
  • National Renewable Energy Laboratory

Research output: Contribution to journalArticlepeer-review

637 Scopus Citations

Abstract

Superior radiation resistance of In 1-xGa xN alloys were investigated. The energy gap of In 1-xGa xN alloys was varied from 0.7 to 3.4 eV. The optical and electronic properties of the alloys exhibit high resistance to high-energy proton irradiation. Results show that the alloys offer potential for radiation-hard high-efficiency solar cells for space applications.

Original languageAmerican English
Pages (from-to)6477-6482
Number of pages6
JournalJournal of Applied Physics
Volume94
Issue number10
DOIs
StatePublished - 15 Nov 2003

NLR Publication Number

  • NREL/JA-520-34881

Fingerprint

Dive into the research topics of 'Superior Radiation Resistance of In1-xGaxN Alloys: a Full-Solar-Spectrum Photovoltaic Material System'. Together they form a unique fingerprint.

Cite this