Subtleties of Capacitance Transients in Amorphous Silicon

Subtleties of Capacitance Transients in Amorphous Silicon

NREL

Research output: Contribution to conference › Paper

Abstract

Using junction capacitance methods, we describe the effect of contacts on charge emission transients in n-type hydrogenated amorphous silicon. The results demonstrate some of the difficulties encountered in observing and interpreting anomalous temperature independent emission transients ('slow relaxation').

Original language	American English
Pages	685-690
Number of pages	6
State	Published - 1996
Event	Amorphous Silicon Technology 1996: Materials Research Society Symposium - San Francisco, California Duration: 8 Apr 1996 → 12 Apr 1996

Conference

Conference	Amorphous Silicon Technology 1996: Materials Research Society Symposium
City	San Francisco, California
Period	8/04/96 → 12/04/96

NLR Publication Number

NREL/CP-23007

Cite this

@conference{464a592735204796860eabe7aa3c6431,

title = "Subtleties of Capacitance Transients in Amorphous Silicon",

abstract = "Using junction capacitance methods, we describe the effect of contacts on charge emission transients in n-type hydrogenated amorphous silicon. The results demonstrate some of the difficulties encountered in observing and interpreting anomalous temperature independent emission transients ('slow relaxation').",

author = "NREL",

year = "1996",

language = "American English",

pages = "685--690",

note = "Amorphous Silicon Technology 1996: Materials Research Society Symposium ; Conference date: 08-04-1996 Through 12-04-1996",

}

TY - CONF

T1 - Subtleties of Capacitance Transients in Amorphous Silicon

AU - NREL, null

PY - 1996

Y1 - 1996

N2 - Using junction capacitance methods, we describe the effect of contacts on charge emission transients in n-type hydrogenated amorphous silicon. The results demonstrate some of the difficulties encountered in observing and interpreting anomalous temperature independent emission transients ('slow relaxation').

AB - Using junction capacitance methods, we describe the effect of contacts on charge emission transients in n-type hydrogenated amorphous silicon. The results demonstrate some of the difficulties encountered in observing and interpreting anomalous temperature independent emission transients ('slow relaxation').

M3 - Paper

SP - 685

EP - 690

T2 - Amorphous Silicon Technology 1996: Materials Research Society Symposium

Y2 - 8 April 1996 through 12 April 1996

ER -

Subtleties of Capacitance Transients in Amorphous Silicon

Abstract

Conference

NLR Publication Number

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Cite this