Study of the CdS/CuIn(Ga)Se2 Interface in Thin Film Solar Cells

Study of the CdS/CuIn(Ga)Se2 Interface in Thin Film Solar Cells

NREL

Research output: Contribution to conference › Paper

Abstract

In this paper we describe our research efforts directed towards the understanding of the CdS/CuInGaSe2 junctions and, specifically, the interaction of the chemical bath with the CuInGaSe2 (CIGS). We find that Cd and S diffuse into the absorber during the CdS growth. Heating the absorbers in Cd partial baths resulted in a significant improvement in the ZnO/CIGS device properties. Photoluminescencemeasurements indicate that the effect of Cd is very similar to that of CBD CdS.

Original language	American English
Pages	121-126
Number of pages	6
State	Published - 1998
Event	Thin-Film Structures for Photovoltaics: Materials Research Society Symposium - Boston, Massachusetts Duration: 2 Dec 1997 → 5 Dec 1997

Conference

Conference	Thin-Film Structures for Photovoltaics: Materials Research Society Symposium
City	Boston, Massachusetts
Period	2/12/97 → 5/12/97

NLR Publication Number

NREL/CP-520-25605

Cite this

@conference{4e4087e96d0543daa5160e2756273528,

title = "Study of the CdS/CuIn(Ga)Se2 Interface in Thin Film Solar Cells",

abstract = "In this paper we describe our research efforts directed towards the understanding of the CdS/CuInGaSe2 junctions and, specifically, the interaction of the chemical bath with the CuInGaSe2 (CIGS). We find that Cd and S diffuse into the absorber during the CdS growth. Heating the absorbers in Cd partial baths resulted in a significant improvement in the ZnO/CIGS device properties. Photoluminescencemeasurements indicate that the effect of Cd is very similar to that of CBD CdS.",

author = "NREL",

year = "1998",

language = "American English",

pages = "121--126",

note = "Thin-Film Structures for Photovoltaics: Materials Research Society Symposium ; Conference date: 02-12-1997 Through 05-12-1997",

}

TY - CONF

T1 - Study of the CdS/CuIn(Ga)Se2 Interface in Thin Film Solar Cells

AU - NREL, null

PY - 1998

Y1 - 1998

N2 - In this paper we describe our research efforts directed towards the understanding of the CdS/CuInGaSe2 junctions and, specifically, the interaction of the chemical bath with the CuInGaSe2 (CIGS). We find that Cd and S diffuse into the absorber during the CdS growth. Heating the absorbers in Cd partial baths resulted in a significant improvement in the ZnO/CIGS device properties. Photoluminescencemeasurements indicate that the effect of Cd is very similar to that of CBD CdS.

AB - In this paper we describe our research efforts directed towards the understanding of the CdS/CuInGaSe2 junctions and, specifically, the interaction of the chemical bath with the CuInGaSe2 (CIGS). We find that Cd and S diffuse into the absorber during the CdS growth. Heating the absorbers in Cd partial baths resulted in a significant improvement in the ZnO/CIGS device properties. Photoluminescencemeasurements indicate that the effect of Cd is very similar to that of CBD CdS.

M3 - Paper

SP - 121

EP - 126

T2 - Thin-Film Structures for Photovoltaics: Materials Research Society Symposium

Y2 - 2 December 1997 through 5 December 1997

ER -

Study of the CdS/CuIn(Ga)Se2 Interface in Thin Film Solar Cells

Abstract

Conference

NLR Publication Number

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