Study of CdTe/CdS Solar Cells Using CSS CdTe Deposited at Low Temperature

H. R. Moutinho; R. G. Dhere; M. M. Al-Jassim; C. Ballif; D. H. Levi; A. B. Swartzlander; M. R. Young; L. L. Kazmerski

doi:10.1109/PVSC.2000.915927

Study of CdTe/CdS Solar Cells Using CSS CdTe Deposited at Low Temperature

H. R. Moutinho
, R. G. Dhere
, M. M. Al-Jassim
, C. Ballif
, D. H. Levi
, A. B. Swartzlander
, M. R. Young
, L. L. Kazmerski

National Renewable Energy Laboratory

Research output: Contribution to conference › Paper › peer-review

28 Scopus Citations

Abstract

We have prepared thin-film CdTe/CdS solar cells using CdTe deposited by close-spaced sublimation (CSS), at a temperature much lower (∼450°C) than the one used in the conventional process (620°C). The CdTe films were treated with the usual CdCl₂ dipping process or with a new process using vapor CdC1₂. The vapor process was much more effective in the recrystallization process, and for the first time we observed extensive diffusion of S into CSS CdTe films. We found a direct correlation between the photoluminescence lifetime of the minority carriers and the efficiency-related parameters of the cells. The best cell produced in this work used low-temperature CdTe films treated by vapor and had an efficiency of 11.9 %, higher than in cells prepared using high-temperature CdTe films, which shows the potential of this new process to fabricate high-efficiency solar cells.

Original language	American English
Pages	646-649
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.2000.915927
State	Published - 2000
Event	28th IEEE Photovoltaic Specialists Conference, PVSC 2000 - Anchorage, United States Duration: 15 Sep 2000 → 22 Sep 2000

Conference

Conference	28th IEEE Photovoltaic Specialists Conference, PVSC 2000
Country/Territory	United States
City	Anchorage
Period	15/09/00 → 22/09/00

Bibliographical note

Publisher Copyright:
© 2000 IEEE.

NLR Publication Number

NREL/CP-520-28927

Access to Document

10.1109/PVSC.2000.915927

Cite this

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title = "Study of CdTe/CdS Solar Cells Using CSS CdTe Deposited at Low Temperature",

abstract = "We have prepared thin-film CdTe/CdS solar cells using CdTe deposited by close-spaced sublimation (CSS), at a temperature much lower (∼450°C) than the one used in the conventional process (620°C). The CdTe films were treated with the usual CdCl2 dipping process or with a new process using vapor CdC12. The vapor process was much more effective in the recrystallization process, and for the first time we observed extensive diffusion of S into CSS CdTe films. We found a direct correlation between the photoluminescence lifetime of the minority carriers and the efficiency-related parameters of the cells. The best cell produced in this work used low-temperature CdTe films treated by vapor and had an efficiency of 11.9 \%, higher than in cells prepared using high-temperature CdTe films, which shows the potential of this new process to fabricate high-efficiency solar cells.",

author = "Moutinho, \{H. R.\} and Dhere, \{R. G.\} and Al-Jassim, \{M. M.\} and C. Ballif and Levi, \{D. H.\} and Swartzlander, \{A. B.\} and Young, \{M. R.\} and Kazmerski, \{L. L.\}",

note = "Publisher Copyright: {\textcopyright} 2000 IEEE.; 28th IEEE Photovoltaic Specialists Conference, PVSC 2000 ; Conference date: 15-09-2000 Through 22-09-2000",

year = "2000",

doi = "10.1109/PVSC.2000.915927",

language = "American English",

pages = "646--649",

}

TY - CONF

T1 - Study of CdTe/CdS Solar Cells Using CSS CdTe Deposited at Low Temperature

AU - Moutinho, H. R.

AU - Dhere, R. G.

AU - Al-Jassim, M. M.

AU - Ballif, C.

AU - Levi, D. H.

AU - Swartzlander, A. B.

AU - Young, M. R.

AU - Kazmerski, L. L.

PY - 2000

Y1 - 2000

N2 - We have prepared thin-film CdTe/CdS solar cells using CdTe deposited by close-spaced sublimation (CSS), at a temperature much lower (∼450°C) than the one used in the conventional process (620°C). The CdTe films were treated with the usual CdCl2 dipping process or with a new process using vapor CdC12. The vapor process was much more effective in the recrystallization process, and for the first time we observed extensive diffusion of S into CSS CdTe films. We found a direct correlation between the photoluminescence lifetime of the minority carriers and the efficiency-related parameters of the cells. The best cell produced in this work used low-temperature CdTe films treated by vapor and had an efficiency of 11.9 %, higher than in cells prepared using high-temperature CdTe films, which shows the potential of this new process to fabricate high-efficiency solar cells.

AB - We have prepared thin-film CdTe/CdS solar cells using CdTe deposited by close-spaced sublimation (CSS), at a temperature much lower (∼450°C) than the one used in the conventional process (620°C). The CdTe films were treated with the usual CdCl2 dipping process or with a new process using vapor CdC12. The vapor process was much more effective in the recrystallization process, and for the first time we observed extensive diffusion of S into CSS CdTe films. We found a direct correlation between the photoluminescence lifetime of the minority carriers and the efficiency-related parameters of the cells. The best cell produced in this work used low-temperature CdTe films treated by vapor and had an efficiency of 11.9 %, higher than in cells prepared using high-temperature CdTe films, which shows the potential of this new process to fabricate high-efficiency solar cells.

UR - https://www.scopus.com/pages/publications/84949560920

U2 - 10.1109/PVSC.2000.915927

DO - 10.1109/PVSC.2000.915927

M3 - Paper

AN - SCOPUS:84949560920

SP - 646

EP - 649

T2 - 28th IEEE Photovoltaic Specialists Conference, PVSC 2000

Y2 - 15 September 2000 through 22 September 2000

ER -

Study of CdTe/CdS Solar Cells Using CSS CdTe Deposited at Low Temperature

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