Strain Relaxation and Band-Gap Tunability in Ternary InxGa1-xN Nanowires: Article No. 193301

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Original language	American English
Number of pages	4
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	78
Issue number	19
DOIs	https://doi.org/10.1103/PhysRevB.78.193301
State	Published - 2008

NLR Publication Number

@article{7819fab1b77145ab90a64e16b3d49053,

title = "Strain Relaxation and Band-Gap Tunability in Ternary InxGa1-xN Nanowires: Article No. 193301",

keywords = "basic sciences, materials science",

author = "Suhuai Wei",

year = "2008",

doi = "10.1103/PhysRevB.78.193301",

language = "American English",

volume = "78",

journal = "Physical Review B - Condensed Matter and Materials Physics",

issn = "1098-0121",

publisher = "American Physical Society",

number = "19",

}

TY - JOUR

T1 - Strain Relaxation and Band-Gap Tunability in Ternary InxGa1-xN Nanowires

T2 - Article No. 193301

AU - Wei, Suhuai

PY - 2008

Y1 - 2008

KW - basic sciences

KW - materials science

U2 - 10.1103/PhysRevB.78.193301

DO - 10.1103/PhysRevB.78.193301

M3 - Article

SN - 1098-0121

VL - 78

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 19

ER -