Stable Ytterbium-Insulator-Semiconductor Solar Cell Based on an Interface Degradation Model

Research output: Contribution to journal › Article

Original language	American English
Pages (from-to)	1840-1842
Number of pages	3
Journal	IEEE Transactions on Electron Devices
Volume	ED-30
Issue number	12
DOIs	https://doi.org/10.1109/T-ED.1983.21457
State	Published - 1983

Work performed by Department of Electrical and Computer Engineering, State University of New York at Buffalo, Amherst, NY

NLR Publication Number

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title = "Stable Ytterbium-Insulator-Semiconductor Solar Cell Based on an Interface Degradation Model",

author = "NREL",

note = "Work performed by Department of Electrical and Computer Engineering, State University of New York at Buffalo, Amherst, NY",

year = "1983",

doi = "10.1109/T-ED.1983.21457",

language = "American English",

volume = "ED-30",

pages = "1840--1842",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "12",

}

TY - JOUR

T1 - Stable Ytterbium-Insulator-Semiconductor Solar Cell Based on an Interface Degradation Model

AU - NREL, null

N1 - Work performed by Department of Electrical and Computer Engineering, State University of New York at Buffalo, Amherst, NY

PY - 1983

Y1 - 1983

U2 - 10.1109/T-ED.1983.21457

DO - 10.1109/T-ED.1983.21457

M3 - Article

SN - 0018-9383

VL - ED-30

SP - 1840

EP - 1842

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 12

ER -