Spontaneous Ordering in GaInP2: A Polarized-Piezomodulated-Reflectivity Study

R. G. Alonso; A. Mascarenhas; G. S. Horner; K. A. Bertness; S. R. Kurtz; J. M. Olson

doi:10.1103/PhysRevB.48.11833

Spontaneous Ordering in GaInP2: A Polarized-Piezomodulated-Reflectivity Study

R. G. Alonso
, A. Mascarenhas
, G. S. Horner
, K. A. Bertness
, S. R. Kurtz
, J. M. Olson

Materials Science

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

50 Scopus Citations

Abstract

Piezomodulated reflectivity is used to probe the electronic structure of GaInP2 epilayers grown by organometallic chemical-vapor epitaxy on misoriented [001] GaAs substrates. The epilayers, grown at different growth temperatures using 2° and 6° misoriented substrates, exhibit various degrees of ordering. Our study provides information on the fundamental gap, crystal-field splitting, and spin-orbit splitting for temperatures ranging from 6 to 250 K.

Original language	American English
Pages (from-to)	11833-11837
Number of pages	5
Journal	Physical Review B
Volume	48
Issue number	16
DOIs	https://doi.org/10.1103/PhysRevB.48.11833 https://doi.org/10.1103/PhysRevB.48.11833
State	Published - 1993

NLR Publication Number

NREL/JA-451-5614

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title = "Spontaneous Ordering in GaInP2: A Polarized-Piezomodulated-Reflectivity Study",

abstract = "Piezomodulated reflectivity is used to probe the electronic structure of GaInP2 epilayers grown by organometallic chemical-vapor epitaxy on misoriented [001] GaAs substrates. The epilayers, grown at different growth temperatures using 2° and 6° misoriented substrates, exhibit various degrees of ordering. Our study provides information on the fundamental gap, crystal-field splitting, and spin-orbit splitting for temperatures ranging from 6 to 250 K.",

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year = "1993",

doi = "10.1103/PhysRevB.48.11833",

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pages = "11833--11837",

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AU - Alonso, R. G.

AU - Mascarenhas, A.

AU - Horner, G. S.

AU - Bertness, K. A.

AU - Kurtz, S. R.

AU - Olson, J. M.

PY - 1993

Y1 - 1993

N2 - Piezomodulated reflectivity is used to probe the electronic structure of GaInP2 epilayers grown by organometallic chemical-vapor epitaxy on misoriented [001] GaAs substrates. The epilayers, grown at different growth temperatures using 2° and 6° misoriented substrates, exhibit various degrees of ordering. Our study provides information on the fundamental gap, crystal-field splitting, and spin-orbit splitting for temperatures ranging from 6 to 250 K.

AB - Piezomodulated reflectivity is used to probe the electronic structure of GaInP2 epilayers grown by organometallic chemical-vapor epitaxy on misoriented [001] GaAs substrates. The epilayers, grown at different growth temperatures using 2° and 6° misoriented substrates, exhibit various degrees of ordering. Our study provides information on the fundamental gap, crystal-field splitting, and spin-orbit splitting for temperatures ranging from 6 to 250 K.

UR - https://www.scopus.com/pages/publications/0001208910

U2 - 10.1103/PhysRevB.48.11833

DO - 10.1103/PhysRevB.48.11833

M3 - Article

AN - SCOPUS:0001208910

SN - 0163-1829

VL - 48

SP - 11833

EP - 11837

JO - Physical Review B

JF - Physical Review B

IS - 16

ER -

Spontaneous Ordering in GaInP2: A Polarized-Piezomodulated-Reflectivity Study

Abstract

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