Solid Phase Crystallization of Hot-Wire CVD Amorphous Silicon Films

David L. Young; Paul Stradins; Eugene Iwaniczko; Bobby To; Bob Reedy; Yanfa Yan; Howard M. Branz; John Lohr; Manuel Alvarez; John Booske; Amy Marconnet; Qi Wang

doi:10.1557/proc-862-a10.5

Solid Phase Crystallization of Hot-Wire CVD Amorphous Silicon Films

David L. Young
, Paul Stradins
, Eugene Iwaniczko
, Bobby To
, Bob Reedy
, Yanfa Yan
, Howard M. Branz
, John Lohr
, Manuel Alvarez
, John Booske
, Amy Marconnet
, Qi Wang

Chemistry and Nanoscience

National Renewable Energy Laboratory
General Atomics
University of Wisconsin-Madison

Research output: Contribution to conference › Paper › peer-review

10 Scopus Citations

Abstract

We measure times for complete solid phase crystallization (SPC) of hydrogenated amorphous silicon (a-Si:H) thin films that vary eight orders of magnitude, from a few ms to a few days. The time-to-crystallization activation energy is consistent with literature values of approximately 3.4 eV but the prefactor is markedly different for hot-wire chemical vapor deposition (HWCVD) films than for plasma-enhanced (PE) CVD films. The crystallized films were 0.3 - 2 μm thick, and deposited by high deposition rate (10-100 Å/s) HWCVD or standard PECVD onto glass substrates. We annealed these a-Si:H films over a wide temperature range (500 to 1100°C) using techniques including simple hot-plates and tube furnaces, rapid thermal annealing by a tungsten-halogen lamp, and microwave electromagnetic heating at 2.45 GHz (magnetron) and 110 GHz (gyrotron).

Original language	American English
Pages	233-238
Number of pages	6
DOIs	https://doi.org/10.1557/proc-862-a10.5
State	Published - 2005
Event	Amorphous and Nanocrystalline Silicon Science and Technology 2005: Materials Research Society Symposium - San Francisco, California Duration: 28 Mar 2005 → 1 Apr 2005

Conference

Conference	Amorphous and Nanocrystalline Silicon Science and Technology 2005: Materials Research Society Symposium
City	San Francisco, California
Period	28/03/05 → 1/04/05

NLR Publication Number

NREL/CP-520-37833

Access to Document

10.1557/proc-862-a10.5

Cite this

Young, D. L., Stradins, P., Iwaniczko, E., To, B., Reedy, B., Yan, Y., Branz, H. M., Lohr, J., Alvarez, M., Booske, J., Marconnet, A., & Wang, Q. (2005). Solid Phase Crystallization of Hot-Wire CVD Amorphous Silicon Films. 233-238. Paper presented at Amorphous and Nanocrystalline Silicon Science and Technology 2005: Materials Research Society Symposium, San Francisco, California. https://doi.org/10.1557/proc-862-a10.5

@conference{bc84c3430355483dbbf14a3e61e1d466,

title = "Solid Phase Crystallization of Hot-Wire CVD Amorphous Silicon Films",

abstract = "We measure times for complete solid phase crystallization (SPC) of hydrogenated amorphous silicon (a-Si:H) thin films that vary eight orders of magnitude, from a few ms to a few days. The time-to-crystallization activation energy is consistent with literature values of approximately 3.4 eV but the prefactor is markedly different for hot-wire chemical vapor deposition (HWCVD) films than for plasma-enhanced (PE) CVD films. The crystallized films were 0.3 - 2 μm thick, and deposited by high deposition rate (10-100 {\AA}/s) HWCVD or standard PECVD onto glass substrates. We annealed these a-Si:H films over a wide temperature range (500 to 1100°C) using techniques including simple hot-plates and tube furnaces, rapid thermal annealing by a tungsten-halogen lamp, and microwave electromagnetic heating at 2.45 GHz (magnetron) and 110 GHz (gyrotron).",

author = "Young, \{David L.\} and Paul Stradins and Eugene Iwaniczko and Bobby To and Bob Reedy and Yanfa Yan and Branz, \{Howard M.\} and John Lohr and Manuel Alvarez and John Booske and Amy Marconnet and Qi Wang",

year = "2005",

doi = "10.1557/proc-862-a10.5",

language = "American English",

pages = "233--238",

note = "Amorphous and Nanocrystalline Silicon Science and Technology 2005: Materials Research Society Symposium ; Conference date: 28-03-2005 Through 01-04-2005",

}

Young, DL , Stradins, P, Iwaniczko, E, To, B, Reedy, B, Yan, Y, Branz, HM, Lohr, J, Alvarez, M, Booske, J, Marconnet, A & Wang, Q 2005, 'Solid Phase Crystallization of Hot-Wire CVD Amorphous Silicon Films', Paper presented at Amorphous and Nanocrystalline Silicon Science and Technology 2005: Materials Research Society Symposium, San Francisco, California, 28/03/05 - 1/04/05 pp. 233-238. https://doi.org/10.1557/proc-862-a10.5

TY - CONF

T1 - Solid Phase Crystallization of Hot-Wire CVD Amorphous Silicon Films

AU - Young, David L.

AU - Stradins, Paul

AU - Iwaniczko, Eugene

AU - To, Bobby

AU - Reedy, Bob

AU - Yan, Yanfa

AU - Branz, Howard M.

AU - Lohr, John

AU - Alvarez, Manuel

AU - Booske, John

AU - Marconnet, Amy

AU - Wang, Qi

PY - 2005

Y1 - 2005

N2 - We measure times for complete solid phase crystallization (SPC) of hydrogenated amorphous silicon (a-Si:H) thin films that vary eight orders of magnitude, from a few ms to a few days. The time-to-crystallization activation energy is consistent with literature values of approximately 3.4 eV but the prefactor is markedly different for hot-wire chemical vapor deposition (HWCVD) films than for plasma-enhanced (PE) CVD films. The crystallized films were 0.3 - 2 μm thick, and deposited by high deposition rate (10-100 Å/s) HWCVD or standard PECVD onto glass substrates. We annealed these a-Si:H films over a wide temperature range (500 to 1100°C) using techniques including simple hot-plates and tube furnaces, rapid thermal annealing by a tungsten-halogen lamp, and microwave electromagnetic heating at 2.45 GHz (magnetron) and 110 GHz (gyrotron).

AB - We measure times for complete solid phase crystallization (SPC) of hydrogenated amorphous silicon (a-Si:H) thin films that vary eight orders of magnitude, from a few ms to a few days. The time-to-crystallization activation energy is consistent with literature values of approximately 3.4 eV but the prefactor is markedly different for hot-wire chemical vapor deposition (HWCVD) films than for plasma-enhanced (PE) CVD films. The crystallized films were 0.3 - 2 μm thick, and deposited by high deposition rate (10-100 Å/s) HWCVD or standard PECVD onto glass substrates. We annealed these a-Si:H films over a wide temperature range (500 to 1100°C) using techniques including simple hot-plates and tube furnaces, rapid thermal annealing by a tungsten-halogen lamp, and microwave electromagnetic heating at 2.45 GHz (magnetron) and 110 GHz (gyrotron).

UR - https://www.scopus.com/pages/publications/30644459421

U2 - 10.1557/proc-862-a10.5

DO - 10.1557/proc-862-a10.5

M3 - Paper

AN - SCOPUS:30644459421

SP - 233

EP - 238

T2 - Amorphous and Nanocrystalline Silicon Science and Technology 2005: Materials Research Society Symposium

Y2 - 28 March 2005 through 1 April 2005

ER -

Solid Phase Crystallization of Hot-Wire CVD Amorphous Silicon Films

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