Soft X-Ray Spectroscopy of a Complex Heterojunction in High-Efficiency Thin-Film Photovoltaics: Intermixing and Zn Speciation at the Zn(O,S)/Cu(In,Ga)Se2 Interface

Rebekah Garris; Lorelle Mansfield; Kannan Ramanathan; Michelle Mezher; Monika Blum; Dirk Hauschild; Kimberly Horsley; Douglas Duncan; Wanli Yang; Marcus Bar; Lothar Weinhardt; Clemens Heske

doi:10.1021/acsami.6b09245

Soft X-Ray Spectroscopy of a Complex Heterojunction in High-Efficiency Thin-Film Photovoltaics: Intermixing and Zn Speciation at the Zn(O,S)/Cu(In,Ga)Se2 Interface

Rebekah Garris
, Lorelle Mansfield
, Kannan Ramanathan
, Michelle Mezher
, Monika Blum
, Dirk Hauschild
, Kimberly Horsley
, Douglas Duncan
, Wanli Yang
, Marcus Bar
, Lothar Weinhardt
, Clemens Heske

Materials Science

University of Nevada, Las Vegas
Karlsruhe Institute of Technology
Lawrence Berkeley National Laboratory
Helmholtz-Zentrum Berlin
Brandenburg University of Technology

Research output: Contribution to journal › Article › peer-review

7 Scopus Citations

Abstract

The chemical structure of the Zn(O,S)/Cu(In,Ga)Se₂ interface in high-efficiency photovoltaic devices is investigated using X-ray photoelectron and Auger electron spectroscopy, as well as soft X-ray emission spectroscopy. We find that the Ga/(Ga+In) ratio at the absorber surface does not change with the formation of the Zn(O,S)/Cu(In,Ga)Se₂ interface. Furthermore, we find evidence for Zn in multiple bonding environments, including ZnS, ZnO, Zn(OH)₂, and ZnSe. We also observe dehydrogenation of the Zn(O,S) buffer layer after Ar⁺ ion treatment. Similar to high-efficiency CdS/Cu(In,Ga)Se₂ devices, intermixing occurs at the interface, with diffusion of Se into the buffer, and the formation of S - In and/or S - Ga bonds at or close to the interface.

Original language	American English
Pages (from-to)	33256-33263
Number of pages	8
Journal	ACS Applied Materials and Interfaces
Volume	8
Issue number	48
DOIs	https://doi.org/10.1021/acsami.6b09245 https://doi.org/10.1021/acsami.6b09245
State	Published - 7 Dec 2016

Bibliographical note

Publisher Copyright:
© 2016 American Chemical Society.

NLR Publication Number

NREL/JA-5K00-67637

Keywords

alternative buffer layers
chalcopyrite thin-film solar cell
chemical structure
X-ray emission spectroscopy
X-ray photoelectron spectroscopy
Zn(O,S)

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Garris, R., Mansfield, L., Ramanathan, K., Mezher, M., Blum, M., Hauschild, D., Horsley, K., Duncan, D., Yang, W., Bar, M., Weinhardt, L., & Heske, C. (2016). Soft X-Ray Spectroscopy of a Complex Heterojunction in High-Efficiency Thin-Film Photovoltaics: Intermixing and Zn Speciation at the Zn(O,S)/Cu(In,Ga)Se2 Interface. ACS Applied Materials and Interfaces, 8(48), 33256-33263. https://doi.org/10.1021/acsami.6b09245, https://doi.org/10.1021/acsami.6b09245

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title = "Soft X-Ray Spectroscopy of a Complex Heterojunction in High-Efficiency Thin-Film Photovoltaics: Intermixing and Zn Speciation at the Zn(O,S)/Cu(In,Ga)Se2 Interface",

abstract = "The chemical structure of the Zn(O,S)/Cu(In,Ga)Se2 interface in high-efficiency photovoltaic devices is investigated using X-ray photoelectron and Auger electron spectroscopy, as well as soft X-ray emission spectroscopy. We find that the Ga/(Ga+In) ratio at the absorber surface does not change with the formation of the Zn(O,S)/Cu(In,Ga)Se2 interface. Furthermore, we find evidence for Zn in multiple bonding environments, including ZnS, ZnO, Zn(OH)2, and ZnSe. We also observe dehydrogenation of the Zn(O,S) buffer layer after Ar+ ion treatment. Similar to high-efficiency CdS/Cu(In,Ga)Se2 devices, intermixing occurs at the interface, with diffusion of Se into the buffer, and the formation of S - In and/or S - Ga bonds at or close to the interface.",

keywords = "alternative buffer layers, chalcopyrite thin-film solar cell, chemical structure, X-ray emission spectroscopy, X-ray photoelectron spectroscopy, Zn(O,S)",

author = "Rebekah Garris and Lorelle Mansfield and Kannan Ramanathan and Michelle Mezher and Monika Blum and Dirk Hauschild and Kimberly Horsley and Douglas Duncan and Wanli Yang and Marcus Bar and Lothar Weinhardt and Clemens Heske",

note = "Publisher Copyright: {\textcopyright} 2016 American Chemical Society.",

year = "2016",

month = dec,

day = "7",

doi = "10.1021/acsami.6b09245",

language = "American English",

volume = "8",

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Garris, R, Mansfield, L, Ramanathan, K, Mezher, M, Blum, M, Hauschild, D, Horsley, K, Duncan, D, Yang, W, Bar, M, Weinhardt, L & Heske, C 2016, 'Soft X-Ray Spectroscopy of a Complex Heterojunction in High-Efficiency Thin-Film Photovoltaics: Intermixing and Zn Speciation at the Zn(O,S)/Cu(In,Ga)Se2 Interface', ACS Applied Materials and Interfaces, vol. 8, no. 48, pp. 33256-33263. https://doi.org/10.1021/acsami.6b09245, https://doi.org/10.1021/acsami.6b09245

Soft X-Ray Spectroscopy of a Complex Heterojunction in High-Efficiency Thin-Film Photovoltaics: Intermixing and Zn Speciation at the Zn(O,S)/Cu(In,Ga)Se2 Interface. / Garris, Rebekah; Mansfield, Lorelle; Ramanathan, Kannan et al.
In: ACS Applied Materials and Interfaces, Vol. 8, No. 48, 07.12.2016, p. 33256-33263.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Soft X-Ray Spectroscopy of a Complex Heterojunction in High-Efficiency Thin-Film Photovoltaics: Intermixing and Zn Speciation at the Zn(O,S)/Cu(In,Ga)Se2 Interface

AU - Garris, Rebekah

AU - Mansfield, Lorelle

AU - Ramanathan, Kannan

AU - Mezher, Michelle

AU - Blum, Monika

AU - Hauschild, Dirk

AU - Horsley, Kimberly

AU - Duncan, Douglas

AU - Yang, Wanli

AU - Bar, Marcus

AU - Weinhardt, Lothar

AU - Heske, Clemens

PY - 2016/12/7

Y1 - 2016/12/7

N2 - The chemical structure of the Zn(O,S)/Cu(In,Ga)Se2 interface in high-efficiency photovoltaic devices is investigated using X-ray photoelectron and Auger electron spectroscopy, as well as soft X-ray emission spectroscopy. We find that the Ga/(Ga+In) ratio at the absorber surface does not change with the formation of the Zn(O,S)/Cu(In,Ga)Se2 interface. Furthermore, we find evidence for Zn in multiple bonding environments, including ZnS, ZnO, Zn(OH)2, and ZnSe. We also observe dehydrogenation of the Zn(O,S) buffer layer after Ar+ ion treatment. Similar to high-efficiency CdS/Cu(In,Ga)Se2 devices, intermixing occurs at the interface, with diffusion of Se into the buffer, and the formation of S - In and/or S - Ga bonds at or close to the interface.

AB - The chemical structure of the Zn(O,S)/Cu(In,Ga)Se2 interface in high-efficiency photovoltaic devices is investigated using X-ray photoelectron and Auger electron spectroscopy, as well as soft X-ray emission spectroscopy. We find that the Ga/(Ga+In) ratio at the absorber surface does not change with the formation of the Zn(O,S)/Cu(In,Ga)Se2 interface. Furthermore, we find evidence for Zn in multiple bonding environments, including ZnS, ZnO, Zn(OH)2, and ZnSe. We also observe dehydrogenation of the Zn(O,S) buffer layer after Ar+ ion treatment. Similar to high-efficiency CdS/Cu(In,Ga)Se2 devices, intermixing occurs at the interface, with diffusion of Se into the buffer, and the formation of S - In and/or S - Ga bonds at or close to the interface.

KW - alternative buffer layers

KW - chalcopyrite thin-film solar cell

KW - chemical structure

KW - X-ray emission spectroscopy

KW - X-ray photoelectron spectroscopy

KW - Zn(O,S)

UR - https://www.scopus.com/pages/publications/85002885906

U2 - 10.1021/acsami.6b09245

DO - 10.1021/acsami.6b09245

M3 - Article

AN - SCOPUS:85002885906

SN - 1944-8244

VL - 8

SP - 33256

EP - 33263

JO - ACS Applied Materials and Interfaces

JF - ACS Applied Materials and Interfaces

IS - 48

ER -

Soft X-Ray Spectroscopy of a Complex Heterojunction in High-Efficiency Thin-Film Photovoltaics: Intermixing and Zn Speciation at the Zn(O,S)/Cu(In,Ga)Se2 Interface

Abstract

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Keywords

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