Sodium Dependence of Cu(In,Ga)Se2 Junction Electronics

Sodium Dependence of Cu(In,Ga)Se2 Junction Electronics

NREL

Research output: Contribution to conference › Paper

Abstract

Cu(In,Ga)Se2 photovoltaic devices were fabricated on five different substrates, with and without sodium-diffusion barriers and with and without the addition of sodium to the absorber. This was done to gain a better understanding of the effects of Na on junction electronics and device performance. Positive trends are observed in open-circuit voltage, fill factor, hole density and diode qualityparameters. The presence of Na appears to have a positive effect on the junction and on the device performance as a whole.

Original language	American English
Pages	621-630
Number of pages	10
State	Published - 1997
Event	NREL/SNL Photovoltaics Program Review: 14th Conference - Lakewood, Colorado Duration: 18 Nov 1996 → 22 Nov 1996

Conference

Conference	NREL/SNL Photovoltaics Program Review: 14th Conference
City	Lakewood, Colorado
Period	18/11/96 → 22/11/96

Bibliographical note

Work performed by Colorado State University, Fort Collins, Colorado

NLR Publication Number

NREL/CP-23740

Cite this

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title = "Sodium Dependence of Cu(In,Ga)Se2 Junction Electronics",

abstract = "Cu(In,Ga)Se2 photovoltaic devices were fabricated on five different substrates, with and without sodium-diffusion barriers and with and without the addition of sodium to the absorber. This was done to gain a better understanding of the effects of Na on junction electronics and device performance. Positive trends are observed in open-circuit voltage, fill factor, hole density and diode qualityparameters. The presence of Na appears to have a positive effect on the junction and on the device performance as a whole.",

author = "NREL",

note = "Work performed by Colorado State University, Fort Collins, Colorado; NREL/SNL Photovoltaics Program Review: 14th Conference ; Conference date: 18-11-1996 Through 22-11-1996",

year = "1997",

language = "American English",

pages = "621--630",

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TY - CONF

T1 - Sodium Dependence of Cu(In,Ga)Se2 Junction Electronics

AU - NREL, null

N1 - Work performed by Colorado State University, Fort Collins, Colorado

PY - 1997

Y1 - 1997

N2 - Cu(In,Ga)Se2 photovoltaic devices were fabricated on five different substrates, with and without sodium-diffusion barriers and with and without the addition of sodium to the absorber. This was done to gain a better understanding of the effects of Na on junction electronics and device performance. Positive trends are observed in open-circuit voltage, fill factor, hole density and diode qualityparameters. The presence of Na appears to have a positive effect on the junction and on the device performance as a whole.

AB - Cu(In,Ga)Se2 photovoltaic devices were fabricated on five different substrates, with and without sodium-diffusion barriers and with and without the addition of sodium to the absorber. This was done to gain a better understanding of the effects of Na on junction electronics and device performance. Positive trends are observed in open-circuit voltage, fill factor, hole density and diode qualityparameters. The presence of Na appears to have a positive effect on the junction and on the device performance as a whole.

M3 - Paper

SP - 621

EP - 630

T2 - NREL/SNL Photovoltaics Program Review: 14th Conference

Y2 - 18 November 1996 through 22 November 1996

ER -

Sodium Dependence of Cu(In,Ga)Se2 Junction Electronics

Abstract

Conference

Bibliographical note

NLR Publication Number

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Cite this