Small-Angle X-Ray Scattering Studies of Microvoids in Amorphous-Silicon-Based Semiconductors: Annual Subcontract Report, 1 February 1992 - 31 January 1993

doi:10.2172/10152993

Small-Angle X-Ray Scattering Studies of Microvoids in Amorphous-Silicon-Based Semiconductors: Annual Subcontract Report, 1 February 1992 - 31 January 1993

NREL

Research output: NLR › Technical Report

Abstract

Our general objectives are to provide new details of the microstructure for the size scale from about 1 to 30 nm in high-quality a-Si:H and related alloys prepared by current state-of-the-art deposition methods as well as by new and emerging deposition technologies and thereby help determine the role of microvoids and other density fluctuations in controlling the opto-electronic properties.

Original language	American English
Number of pages	50
DOIs	https://doi.org/10.2172/10152993
State	Published - 1994

Bibliographical note

Work performed by Colorado School of Mines, Golden, Colorado

NLR Publication Number

NREL/TP-451-6395

Keywords

deposition
optoelectronic properties
thin films

Access to Document

10.2172/10152993

Cite this

@misc{fc3d33c0c75849e19e23156a603740da,

title = "Small-Angle X-Ray Scattering Studies of Microvoids in Amorphous-Silicon-Based Semiconductors: Annual Subcontract Report, 1 February 1992 - 31 January 1993",

abstract = "Our general objectives are to provide new details of the microstructure for the size scale from about 1 to 30 nm in high-quality a-Si:H and related alloys prepared by current state-of-the-art deposition methods as well as by new and emerging deposition technologies and thereby help determine the role of microvoids and other density fluctuations in controlling the opto-electronic properties.",

keywords = "deposition, optoelectronic properties, thin films",

author = "NREL",

note = "Work performed by Colorado School of Mines, Golden, Colorado",

year = "1994",

doi = "10.2172/10152993",

language = "American English",

type = "Other",

}

TY - GEN

T1 - Small-Angle X-Ray Scattering Studies of Microvoids in Amorphous-Silicon-Based Semiconductors: Annual Subcontract Report, 1 February 1992 - 31 January 1993

AU - NREL, null

N1 - Work performed by Colorado School of Mines, Golden, Colorado

PY - 1994

Y1 - 1994

N2 - Our general objectives are to provide new details of the microstructure for the size scale from about 1 to 30 nm in high-quality a-Si:H and related alloys prepared by current state-of-the-art deposition methods as well as by new and emerging deposition technologies and thereby help determine the role of microvoids and other density fluctuations in controlling the opto-electronic properties.

AB - Our general objectives are to provide new details of the microstructure for the size scale from about 1 to 30 nm in high-quality a-Si:H and related alloys prepared by current state-of-the-art deposition methods as well as by new and emerging deposition technologies and thereby help determine the role of microvoids and other density fluctuations in controlling the opto-electronic properties.

KW - deposition

KW - optoelectronic properties

KW - thin films

U2 - 10.2172/10152993

DO - 10.2172/10152993

M3 - Technical Report

ER -

Small-Angle X-Ray Scattering Studies of Microvoids in Amorphous-Silicon-Based Semiconductors: Annual Subcontract Report, 1 February 1992 - 31 January 1993

Abstract

Bibliographical note

NLR Publication Number

Keywords

Access to Document

Fingerprint

Cite this