Similarities in Chemical Intermixing at the Cu/InP and Cu/Si Interfaces

Research output: Contribution to journal › Article

Original language	American English
Pages (from-to)	564-569
Number of pages	6
Journal	Journal of Vacuum Science and Technology B: Microelectronics Processing and Phenomena
Volume	1
Issue number	3
DOIs	https://doi.org/10.1116/1.582599
State	Published - 1983

Work performed by Stanford Electronics Laboratories, Stanford University, Stanford, California

NLR Publication Number

@article{4cf12e332ae8451d8d1a78b0ff294541,

title = "Similarities in Chemical Intermixing at the Cu/InP and Cu/Si Interfaces",

author = "NREL",

note = "Work performed by Stanford Electronics Laboratories, Stanford University, Stanford, California",

year = "1983",

doi = "10.1116/1.582599",

language = "American English",

volume = "1",

pages = "564--569",

journal = "Journal of Vacuum Science and Technology B: Microelectronics Processing and Phenomena",

issn = "0734-211X",

number = "3",

}

TY - JOUR

T1 - Similarities in Chemical Intermixing at the Cu/InP and Cu/Si Interfaces

AU - NREL, null

N1 - Work performed by Stanford Electronics Laboratories, Stanford University, Stanford, California

PY - 1983

Y1 - 1983

U2 - 10.1116/1.582599

DO - 10.1116/1.582599

M3 - Article

SN - 0734-211X

VL - 1

SP - 564

EP - 569

JO - Journal of Vacuum Science and Technology B: Microelectronics Processing and Phenomena

JF - Journal of Vacuum Science and Technology B: Microelectronics Processing and Phenomena

IS - 3

ER -