Silicon Nitride Anti-Reflection Coatings for CdS/CuInSe2 Thin Film Solar Cells by Electron Beam Assisted Chemical Vapor Deposition

B. J. Stanbery; W. S. Chen; R. A. Mickelsen; G. J. Collins; K. A. Emery; J. J. Rocca; L. R. Thompson

doi:10.1016/0379-6787(85)90064-X

Silicon Nitride Anti-Reflection Coatings for CdS/CuInSe2 Thin Film Solar Cells by Electron Beam Assisted Chemical Vapor Deposition

B. J. Stanbery
, W. S. Chen
, R. A. Mickelsen
, G. J. Collins
, K. A. Emery
, J. J. Rocca
, L. R. Thompson

Boeing
Colorado State University

Research output: Contribution to journal › Article › peer-review

5 Scopus Citations

Abstract

The electron beam assisted chemical vapor deposition of silicon nitride anti-reflection coatings onto thin film CdS/CuInSe₂ solar cells and the resultant effects on their performance are reported. In some cases large increases in the short circuit current open circuit voltage and fill factor were observed. The present results are explained by the usual index matching anti-reflection mechanisms and either the passivation of undesirable shunts or improvement of intrinsic diode characteristics.

Original language	American English
Pages (from-to)	289-291
Number of pages	3
Journal	Solar Cells
Volume	14
Issue number	3
DOIs	https://doi.org/10.1016/0379-6787(85)90064-X https://doi.org/10.1016/0379-6787(85)90064-X
State	Published - 1985
Externally published	Yes

Bibliographical note

Work performed by Thin Film Technology, Boeing Aerospace Company, Seattle, Washington, and Department of Electrical Engineering, Colorado State University, Fort Collins, Colorado

NLR Publication Number

ACNR/JA-213-7029

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Cite this

@article{0d9941b542044b55819ba710bf703a38,

title = "Silicon Nitride Anti-Reflection Coatings for CdS/CuInSe2 Thin Film Solar Cells by Electron Beam Assisted Chemical Vapor Deposition",

abstract = "The electron beam assisted chemical vapor deposition of silicon nitride anti-reflection coatings onto thin film CdS/CuInSe2 solar cells and the resultant effects on their performance are reported. In some cases large increases in the short circuit current open circuit voltage and fill factor were observed. The present results are explained by the usual index matching anti-reflection mechanisms and either the passivation of undesirable shunts or improvement of intrinsic diode characteristics.",

author = "Stanbery, \{B. J.\} and Chen, \{W. S.\} and Mickelsen, \{R. A.\} and Collins, \{G. J.\} and Emery, \{K. A.\} and Rocca, \{J. J.\} and Thompson, \{L. R.\}",

note = "Work performed by Thin Film Technology, Boeing Aerospace Company, Seattle, Washington, and Department of Electrical Engineering, Colorado State University, Fort Collins, Colorado",

year = "1985",

doi = "10.1016/0379-6787(85)90064-X",

language = "American English",

volume = "14",

pages = "289--291",

journal = "Solar Cells",

issn = "0379-6787",

publisher = "Elsevier B.V.",

number = "3",

}

TY - JOUR

T1 - Silicon Nitride Anti-Reflection Coatings for CdS/CuInSe2 Thin Film Solar Cells by Electron Beam Assisted Chemical Vapor Deposition

AU - Stanbery, B. J.

AU - Chen, W. S.

AU - Mickelsen, R. A.

AU - Collins, G. J.

AU - Emery, K. A.

AU - Rocca, J. J.

AU - Thompson, L. R.

N1 - Work performed by Thin Film Technology, Boeing Aerospace Company, Seattle, Washington, and Department of Electrical Engineering, Colorado State University, Fort Collins, Colorado

PY - 1985

Y1 - 1985

N2 - The electron beam assisted chemical vapor deposition of silicon nitride anti-reflection coatings onto thin film CdS/CuInSe2 solar cells and the resultant effects on their performance are reported. In some cases large increases in the short circuit current open circuit voltage and fill factor were observed. The present results are explained by the usual index matching anti-reflection mechanisms and either the passivation of undesirable shunts or improvement of intrinsic diode characteristics.

AB - The electron beam assisted chemical vapor deposition of silicon nitride anti-reflection coatings onto thin film CdS/CuInSe2 solar cells and the resultant effects on their performance are reported. In some cases large increases in the short circuit current open circuit voltage and fill factor were observed. The present results are explained by the usual index matching anti-reflection mechanisms and either the passivation of undesirable shunts or improvement of intrinsic diode characteristics.

UR - https://www.scopus.com/pages/publications/0022100986

U2 - 10.1016/0379-6787(85)90064-X

DO - 10.1016/0379-6787(85)90064-X

M3 - Article

AN - SCOPUS:0022100986

SN - 0379-6787

VL - 14

SP - 289

EP - 291

JO - Solar Cells

JF - Solar Cells

IS - 3

ER -

Silicon Nitride Anti-Reflection Coatings for CdS/CuInSe2 Thin Film Solar Cells by Electron Beam Assisted Chemical Vapor Deposition

Abstract

Bibliographical note

NLR Publication Number

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