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Silicon Heterojunction System Field Performance

  • National Renewable Energy Laboratory
  • University of Central Florida
  • Purdue University
  • Sinton Instruments, Inc

Research output: Contribution to journalArticlepeer-review

68 Scopus Citations

Abstract

A silicon heterostructure photovoltaic system fielded for 10 years has been investigated in detail. The system has shown degradation, but at a rate similar to an average Si system, and still within the module warranty level. The power decline is dominated by a nonlinear Voc loss rather than more typical changes in Isc or Fill Factor. Modules have been evaluated using multiple techniques including: dark and light I-V measurement, Suns-Voc , thermal imaging, and quantitative electroluminescence. All techniques indicate that recombination and series resistance in the cells have increased along with a decrease of factor 2 in minority carrier lifetime. Performance changes are fairly uniform across the module, indicating changes occur primarily within the cells.

Original languageAmerican English
Pages (from-to)177-182
Number of pages6
JournalIEEE Journal of Photovoltaics
Volume8
Issue number1
DOIs
StatePublished - 2018

Bibliographical note

Publisher Copyright:
© 2017 IEEE.

NLR Publication Number

  • NREL/JA-5J00-68683

Keywords

  • Durability
  • Heterojunction with intrinsic thin-film layer (HIT)
  • Photovoltaic (PV) field performance
  • Si heterojunction
  • Terms - Degradation rates

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