Silicon Float-Zone Crystal Growth as a Tool for the Study of Defects and Impurities

Research output: Contribution to conference › Paper

Original language	American English
Pages	105-117
Number of pages	13
State	Published - 2000
Event	High Purity Silicon VI: 198th Electrochemical Society Fall Meeting - Phoenix, Arizona Duration: 22 Oct 2000 → 27 Oct 2000

Conference	High Purity Silicon VI: 198th Electrochemical Society Fall Meeting
City	Phoenix, Arizona
Period	22/10/00 → 27/10/00

NLR Publication Number

@conference{dbfd18bea7e349959d640345e64b52cd,

title = "Silicon Float-Zone Crystal Growth as a Tool for the Study of Defects and Impurities",

author = "NREL",

year = "2000",

language = "American English",

pages = "105--117",

note = "High Purity Silicon VI: 198th Electrochemical Society Fall Meeting ; Conference date: 22-10-2000 Through 27-10-2000",

}