Self-Doping, O2-Stable, n-Type Interfacial Layer for Organic Electronics

Research output: Contribution to journal › Article › peer-review

NLR Publication Number

@article{b05cef639df34457add65478cc79ff9c,

title = "Self-Doping, O2-Stable, n-Type Interfacial Layer for Organic Electronics",

keywords = "IFLs, interfacial layer, organic electronics, self-doping",

author = "Brian Gregg",

year = "2012",

doi = "10.1002/aenm.201100446",

language = "American English",

volume = "2",

pages = "455--460",

journal = "Advanced Energy Materials",

issn = "1614-6832",

publisher = "John Wiley and Sons Inc.",

number = "4",

}

TY - JOUR

T1 - Self-Doping, O2-Stable, n-Type Interfacial Layer for Organic Electronics

AU - Gregg, Brian

PY - 2012

Y1 - 2012

KW - IFLs

KW - interfacial layer

KW - organic electronics

KW - self-doping

U2 - 10.1002/aenm.201100446

DO - 10.1002/aenm.201100446

M3 - Article

SN - 1614-6832

VL - 2

SP - 455

EP - 460

JO - Advanced Energy Materials

JF - Advanced Energy Materials

IS - 4

ER -