Self-Aligned, Selective Area Poly-Si/SiO2 Passivated Contacts for Enhanced Photocurrent in Front/Back Solar Cells

David Young; San Theingi; Vincenzo LaSalvia; Kejun Chen; William Nemeth; Dawn Findley; Matthew Page; Pauls Stradins

doi:10.1109/PVSC40753.2019.8981274

Self-Aligned, Selective Area Poly-Si/SiO2 Passivated Contacts for Enhanced Photocurrent in Front/Back Solar Cells

David Young
, San Theingi
, Vincenzo LaSalvia
, Kejun Chen
, William Nemeth
, Dawn Findley
, Matthew Page
, Pauls Stradins

Chemistry and Nanoscience

Research output: Contribution to conference › Paper › peer-review

3 Scopus Citations

Abstract

Poly-Si/SiO₂ passivated contact front/back solar cells suffer low Jsc due to parasitic absorption in the front poly-Si layer. We demonstrate a self-aligned, selective area front contact dry-etch technique that retains the as-deposited poly-Si beneath the metal grid lines but thins it elsewhere. Jsc improves by 0.7 mA/cm² over our standard 40 nm thick poly-Si. Greater improvements are expected with thicker poly-Si needed for fired metal contacts. Surface passivation is slightly diminished with poly-Si thinning but can be partially restored with rehydrogenation.

Original language	American English
Pages	2211-2214
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC40753.2019.8981274 https://doi.org/10.1109/PVSC40753.2019.8981274
State	Published - Jun 2019
Event	46th IEEE Photovoltaic Specialists Conference, PVSC 2019 - Chicago, United States Duration: 16 Jun 2019 → 21 Jun 2019

Conference

Conference	46th IEEE Photovoltaic Specialists Conference, PVSC 2019
Country/Territory	United States
City	Chicago
Period	16/06/19 → 21/06/19

Bibliographical note

See NREL/CP-5900-74072 for preprint

NLR Publication Number

NREL/CP-5900-76354

Keywords

Ohmic contacts
photovoltaic cells
silicon devices

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Cite this

Young, D., Theingi, S., LaSalvia, V., Chen, K., Nemeth, W., Findley, D., Page, M., & Stradins, P. (2019). Self-Aligned, Selective Area Poly-Si/SiO2 Passivated Contacts for Enhanced Photocurrent in Front/Back Solar Cells. 2211-2214. Paper presented at 46th IEEE Photovoltaic Specialists Conference, PVSC 2019, Chicago, United States. https://doi.org/10.1109/PVSC40753.2019.8981274, https://doi.org/10.1109/PVSC40753.2019.8981274

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title = "Self-Aligned, Selective Area Poly-Si/SiO2 Passivated Contacts for Enhanced Photocurrent in Front/Back Solar Cells",

abstract = "Poly-Si/SiO2 passivated contact front/back solar cells suffer low Jsc due to parasitic absorption in the front poly-Si layer. We demonstrate a self-aligned, selective area front contact dry-etch technique that retains the as-deposited poly-Si beneath the metal grid lines but thins it elsewhere. Jsc improves by 0.7 mA/cm2 over our standard 40 nm thick poly-Si. Greater improvements are expected with thicker poly-Si needed for fired metal contacts. Surface passivation is slightly diminished with poly-Si thinning but can be partially restored with rehydrogenation.",

keywords = "Ohmic contacts, photovoltaic cells, silicon devices",

author = "David Young and San Theingi and Vincenzo LaSalvia and Kejun Chen and William Nemeth and Dawn Findley and Matthew Page and Pauls Stradins",

note = "See NREL/CP-5900-74072 for preprint; 46th IEEE Photovoltaic Specialists Conference, PVSC 2019 ; Conference date: 16-06-2019 Through 21-06-2019",

year = "2019",

month = jun,

doi = "10.1109/PVSC40753.2019.8981274",

language = "American English",

pages = "2211--2214",

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Young, D , Theingi, S, LaSalvia, V, Chen, K, Nemeth, W, Findley, D, Page, M & Stradins, P 2019, 'Self-Aligned, Selective Area Poly-Si/SiO2 Passivated Contacts for Enhanced Photocurrent in Front/Back Solar Cells', Paper presented at 46th IEEE Photovoltaic Specialists Conference, PVSC 2019, Chicago, United States, 16/06/19 - 21/06/19 pp. 2211-2214. https://doi.org/10.1109/PVSC40753.2019.8981274, https://doi.org/10.1109/PVSC40753.2019.8981274

TY - CONF

T1 - Self-Aligned, Selective Area Poly-Si/SiO2 Passivated Contacts for Enhanced Photocurrent in Front/Back Solar Cells

AU - Young, David

AU - Theingi, San

AU - LaSalvia, Vincenzo

AU - Chen, Kejun

AU - Nemeth, William

AU - Findley, Dawn

AU - Page, Matthew

AU - Stradins, Pauls

N1 - See NREL/CP-5900-74072 for preprint

PY - 2019/6

Y1 - 2019/6

N2 - Poly-Si/SiO2 passivated contact front/back solar cells suffer low Jsc due to parasitic absorption in the front poly-Si layer. We demonstrate a self-aligned, selective area front contact dry-etch technique that retains the as-deposited poly-Si beneath the metal grid lines but thins it elsewhere. Jsc improves by 0.7 mA/cm2 over our standard 40 nm thick poly-Si. Greater improvements are expected with thicker poly-Si needed for fired metal contacts. Surface passivation is slightly diminished with poly-Si thinning but can be partially restored with rehydrogenation.

AB - Poly-Si/SiO2 passivated contact front/back solar cells suffer low Jsc due to parasitic absorption in the front poly-Si layer. We demonstrate a self-aligned, selective area front contact dry-etch technique that retains the as-deposited poly-Si beneath the metal grid lines but thins it elsewhere. Jsc improves by 0.7 mA/cm2 over our standard 40 nm thick poly-Si. Greater improvements are expected with thicker poly-Si needed for fired metal contacts. Surface passivation is slightly diminished with poly-Si thinning but can be partially restored with rehydrogenation.

KW - Ohmic contacts

KW - photovoltaic cells

KW - silicon devices

UR - https://www.scopus.com/pages/publications/85081534446

U2 - 10.1109/PVSC40753.2019.8981274

DO - 10.1109/PVSC40753.2019.8981274

M3 - Paper

AN - SCOPUS:85081534446

SP - 2211

EP - 2214

T2 - 46th IEEE Photovoltaic Specialists Conference, PVSC 2019

Y2 - 16 June 2019 through 21 June 2019

ER -

Self-Aligned, Selective Area Poly-Si/SiO2 Passivated Contacts for Enhanced Photocurrent in Front/Back Solar Cells

Abstract

Conference

Bibliographical note

NLR Publication Number

Keywords

Access to Document

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