Abstract
Recently, we and others have proposed screening criteria for 'defect-tolerant' photovoltaic (PV) absorbers, identifying several classes of semiconducting compounds with electronic structures similar to those of hybrid lead-halide perovskites. In this work, we reflect on the accuracy and prospects of these new design criteria through a combined experimental and theoretical approach. We construct a model to extract photoluminescence lifetimes of six of these candidate PV absorbers, including four (InI, SbSI, SbSeI, and BiOI) for which time-resolved photoluminescence has not been previously reported. The lifetimes of all six candidate materials exceed 1 ns, a threshold for promising early stage PV device performance. However, there are variations between these materials, and none achieve lifetimes as high as those of the hybrid lead-halide perovskites, suggesting that the heuristics for defect-tolerant semiconductors are incomplete. We explore this through first-principles point defect calculations and Shockley-Read-Hall recombination models to describe the variation between the measured materials. In light of these insights, we discuss the evolution of screening criteria for defect tolerance and high-performance PV materials.
| Original language | American English |
|---|---|
| Pages (from-to) | 4667-4674 |
| Number of pages | 8 |
| Journal | Chemistry of Materials |
| Volume | 29 |
| Issue number | 11 |
| DOIs | |
| State | Published - 2017 |
NLR Publication Number
- NREL/JA-5K00-68928
Keywords
- electronic structures
- photovoltaic absorbers
- semiconducting compounds
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