Room Temperature Infrared Electroluminescence from Thin-Film Polycrystalline Chalcopyrite Cu(In,Ga)Se2-Based Diodes

Room Temperature Infrared Electroluminescence from Thin-Film Polycrystalline Chalcopyrite Cu(In,Ga)Se2-Based Diodes

NREL

Research output: Contribution to conference › Paper

Original language	American English
Pages	803-808
Number of pages	6
State	Published - 1995
Event	Defect and Impurity Engineered Semiconductors and Devices: Materials Research Society Symposium - San Francisco, California Duration: 17 Apr 1995 → 21 Apr 1995

Conference

Conference	Defect and Impurity Engineered Semiconductors and Devices: Materials Research Society Symposium
City	San Francisco, California
Period	17/04/95 → 21/04/95

NLR Publication Number

NREL/CP-413-7712

Cite this

@conference{70ebf10ec5e04147be37eba7a0169559,

title = "Room Temperature Infrared Electroluminescence from Thin-Film Polycrystalline Chalcopyrite Cu(In,Ga)Se2-Based Diodes",

author = "NREL",

year = "1995",

language = "American English",

pages = "803--808",

note = "Defect and Impurity Engineered Semiconductors and Devices: Materials Research Society Symposium ; Conference date: 17-04-1995 Through 21-04-1995",

}