Role of Oxygen Precipitates on the Performance of Crystalline Silicon-Based Photovoltaic Devices

R. K. Ahrenkiel; S. W. Johnston; L. M. Gedvilas; J. D. Webb; J. C. Bisaillon

doi:10.1109/PVSC.2000.915805

Role of Oxygen Precipitates on the Performance of Crystalline Silicon-Based Photovoltaic Devices

R. K. Ahrenkiel
, S. W. Johnston
, L. M. Gedvilas
, J. D. Webb
, J. C. Bisaillon

Materials Science

National Renewable Energy Laboratory
General Electric

Research output: Contribution to conference › Paper › peer-review

1 Scopus Citations

Abstract

Oxide precipitates (OPs) in Czochralski grown silicon were investigated by Fourier transform infrared (FTIR) spectroscopy and ultra-high frequency photoconductive decay (UHFPCD). These data were compared with the photovoltaic properties of test diodes made on the same wafers. The results will indicate a strong correlation between oxide precipitate concentration and the reduction of minority-carrier lifetime and diffusion length. The photovoltaic properties of the test diodes also degraded with the OP concentration.

Original language	American English
Pages	252-255
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.2000.915805
State	Published - 2000
Event	28th IEEE Photovoltaic Specialists Conference, PVSC 2000 - Anchorage, United States Duration: 15 Sep 2000 → 22 Sep 2000

Conference

Conference	28th IEEE Photovoltaic Specialists Conference, PVSC 2000
Country/Territory	United States
City	Anchorage
Period	15/09/00 → 22/09/00

NLR Publication Number

NREL/CP-520-28925

Access to Document

10.1109/PVSC.2000.915805

Cite this

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title = "Role of Oxygen Precipitates on the Performance of Crystalline Silicon-Based Photovoltaic Devices",

abstract = "Oxide precipitates (OPs) in Czochralski grown silicon were investigated by Fourier transform infrared (FTIR) spectroscopy and ultra-high frequency photoconductive decay (UHFPCD). These data were compared with the photovoltaic properties of test diodes made on the same wafers. The results will indicate a strong correlation between oxide precipitate concentration and the reduction of minority-carrier lifetime and diffusion length. The photovoltaic properties of the test diodes also degraded with the OP concentration.",

author = "Ahrenkiel, \{R. K.\} and Johnston, \{S. W.\} and Gedvilas, \{L. M.\} and Webb, \{J. D.\} and Bisaillon, \{J. C.\}",

year = "2000",

doi = "10.1109/PVSC.2000.915805",

language = "American English",

pages = "252--255",

note = "28th IEEE Photovoltaic Specialists Conference, PVSC 2000 ; Conference date: 15-09-2000 Through 22-09-2000",

}

TY - CONF

T1 - Role of Oxygen Precipitates on the Performance of Crystalline Silicon-Based Photovoltaic Devices

AU - Ahrenkiel, R. K.

AU - Johnston, S. W.

AU - Gedvilas, L. M.

AU - Webb, J. D.

AU - Bisaillon, J. C.

PY - 2000

Y1 - 2000

N2 - Oxide precipitates (OPs) in Czochralski grown silicon were investigated by Fourier transform infrared (FTIR) spectroscopy and ultra-high frequency photoconductive decay (UHFPCD). These data were compared with the photovoltaic properties of test diodes made on the same wafers. The results will indicate a strong correlation between oxide precipitate concentration and the reduction of minority-carrier lifetime and diffusion length. The photovoltaic properties of the test diodes also degraded with the OP concentration.

AB - Oxide precipitates (OPs) in Czochralski grown silicon were investigated by Fourier transform infrared (FTIR) spectroscopy and ultra-high frequency photoconductive decay (UHFPCD). These data were compared with the photovoltaic properties of test diodes made on the same wafers. The results will indicate a strong correlation between oxide precipitate concentration and the reduction of minority-carrier lifetime and diffusion length. The photovoltaic properties of the test diodes also degraded with the OP concentration.

UR - https://www.scopus.com/pages/publications/84949569122

U2 - 10.1109/PVSC.2000.915805

DO - 10.1109/PVSC.2000.915805

M3 - Paper

AN - SCOPUS:84949569122

SP - 252

EP - 255

T2 - 28th IEEE Photovoltaic Specialists Conference, PVSC 2000

Y2 - 15 September 2000 through 22 September 2000

ER -

Role of Oxygen Precipitates on the Performance of Crystalline Silicon-Based Photovoltaic Devices

Abstract

Conference

NLR Publication Number

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