Abstract
The photoluminescence (PL) intensity of semiconductors can be modulated by their ambient. We show GaInP2 to respond reversibly to water vapor, irreversibly to oxygen, and with a time dependence to air. We characterize the reversible PL response to water vapor in a set of steady-state measurements that reveal a systematic dependence on pressure. We derive a model for this behavior based on Langmuir adsorption and Shockley-Read-Hall recombination principles to describe how partial pressure controls luminescence. The expression for the GaInP2/water vapor system shows excellent agreement to measurements. Combined, the PL monitoring technique and model demonstrate a quantitative approach for probing gas/surface defect interactions of semiconductor processing steps, luminescence-based sensors, and photocatalytic surfaces.
| Original language | American English |
|---|---|
| Pages (from-to) | 4418-4422 |
| Number of pages | 5 |
| Journal | Journal of Physical Chemistry C |
| Volume | 120 |
| Issue number | 8 |
| DOIs | |
| State | Published - 3 Mar 2016 |
Bibliographical note
Publisher Copyright:© 2016 American Chemical Society.
NLR Publication Number
- NREL/JA-5900-65313
Keywords
- adsorption model
- semiconductor photoluminescence
- Shockley-Read-Hall recombination
- surface-state passivation
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