Resetting the Defect Chemistry in CdTe

Wyatt Metzger; David Albin; Eric Colegrove; John Moseley; Joel Duenow; Stuart Farrell; Helio Moutinho; Matthew Reese; Steven Johnston; Teresa Barnes; Craig Perkins; Harvey Guthrey; Mowafak Al-Jassim; James Burst

doi:10.1109/PVSC.2015.7356444

Resetting the Defect Chemistry in CdTe

Wyatt Metzger
, David Albin
, Eric Colegrove
, John Moseley
, Joel Duenow
, Stuart Farrell
, Helio Moutinho
, Matthew Reese
, Steven Johnston
, Teresa Barnes
, Craig Perkins
, Harvey Guthrey
, Mowafak Al-Jassim
, James Burst

Materials Science

Research output: Contribution to conference › Paper › peer-review

5 Scopus Citations

Abstract

CdTe cell efficiencies have increased from 17% to 21% in the past three years and now rival polycrystalline Si [1]. Research is now targeting 25% to displace Si, attain costs less than 40 cents/W, and reach grid parity. Recent efficiency gains have come largely from greater photocurrent. There is still headroom to lower costs and improve performance by increasing open-circuit voltage (Voc) and fill factor. Record-efficiency CdTe cells have been limited to Voc < 880 mV, whereas GaAs can attain Voc of 1.10 V with a slightly smaller bandgap [2,3]. To overcome this barrier, we seek to understand and increase lifetime and carrier concentration in CdTe. In polycrystalline structures, lifetime can be limited by interface and grain-boundary recombination, and attaining high carrier concentration is complicated by morphology.

Original language	American English
Number of pages	3
DOIs	https://doi.org/10.1109/PVSC.2015.7356444 https://doi.org/10.1109/PVSC.2015.7356444
State	Published - 14 Dec 2015
Event	42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States Duration: 14 Jun 2015 → 19 Jun 2015

Conference

Conference	42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
Country/Territory	United States
City	New Orleans
Period	14/06/15 → 19/06/15

Bibliographical note

Publisher Copyright:
© 2015 IEEE.

NLR Publication Number

NREL/CP-5K00-63648

Keywords

cadmium compounds
carrier concentration CdTe
charge-carrier lifetime
photovoltaic cells
solar cells
tellurium
thin films

Access to Document

Cite this

Metzger, W., Albin, D., Colegrove, E., Moseley, J., Duenow, J., Farrell, S., Moutinho, H., Reese, M., Johnston, S., Barnes, T., Perkins, C., Guthrey, H., Al-Jassim, M., & Burst, J. (2015). Resetting the Defect Chemistry in CdTe. Paper presented at 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015, New Orleans, United States. https://doi.org/10.1109/PVSC.2015.7356444, https://doi.org/10.1109/PVSC.2015.7356444

@conference{6cf5b0f1a5684b09b6002bcca3d3131e,

title = "Resetting the Defect Chemistry in CdTe",

abstract = "CdTe cell efficiencies have increased from 17\% to 21\% in the past three years and now rival polycrystalline Si [1]. Research is now targeting 25\% to displace Si, attain costs less than 40 cents/W, and reach grid parity. Recent efficiency gains have come largely from greater photocurrent. There is still headroom to lower costs and improve performance by increasing open-circuit voltage (Voc) and fill factor. Record-efficiency CdTe cells have been limited to Voc < 880 mV, whereas GaAs can attain Voc of 1.10 V with a slightly smaller bandgap [2,3]. To overcome this barrier, we seek to understand and increase lifetime and carrier concentration in CdTe. In polycrystalline structures, lifetime can be limited by interface and grain-boundary recombination, and attaining high carrier concentration is complicated by morphology.",

keywords = "cadmium compounds, carrier concentration CdTe, charge-carrier lifetime, photovoltaic cells, solar cells, tellurium, thin films",

author = "Wyatt Metzger and David Albin and Eric Colegrove and John Moseley and Joel Duenow and Stuart Farrell and Helio Moutinho and Matthew Reese and Steven Johnston and Teresa Barnes and Craig Perkins and Harvey Guthrey and Mowafak Al-Jassim and James Burst",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 ; Conference date: 14-06-2015 Through 19-06-2015",

year = "2015",

month = dec,

day = "14",

doi = "10.1109/PVSC.2015.7356444",

language = "American English",

}

Metzger, W, Albin, D, Colegrove, E, Moseley, J, Duenow, J, Farrell, S, Moutinho, H, Reese, M , Johnston, S , Barnes, T , Perkins, C, Guthrey, H, Al-Jassim, M & Burst, J 2015, 'Resetting the Defect Chemistry in CdTe', Paper presented at 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015, New Orleans, United States, 14/06/15 - 19/06/15. https://doi.org/10.1109/PVSC.2015.7356444, https://doi.org/10.1109/PVSC.2015.7356444

TY - CONF

T1 - Resetting the Defect Chemistry in CdTe

AU - Metzger, Wyatt

AU - Albin, David

AU - Colegrove, Eric

AU - Moseley, John

AU - Duenow, Joel

AU - Farrell, Stuart

AU - Moutinho, Helio

AU - Reese, Matthew

AU - Johnston, Steven

AU - Barnes, Teresa

AU - Perkins, Craig

AU - Guthrey, Harvey

AU - Al-Jassim, Mowafak

AU - Burst, James

PY - 2015/12/14

Y1 - 2015/12/14

N2 - CdTe cell efficiencies have increased from 17% to 21% in the past three years and now rival polycrystalline Si [1]. Research is now targeting 25% to displace Si, attain costs less than 40 cents/W, and reach grid parity. Recent efficiency gains have come largely from greater photocurrent. There is still headroom to lower costs and improve performance by increasing open-circuit voltage (Voc) and fill factor. Record-efficiency CdTe cells have been limited to Voc < 880 mV, whereas GaAs can attain Voc of 1.10 V with a slightly smaller bandgap [2,3]. To overcome this barrier, we seek to understand and increase lifetime and carrier concentration in CdTe. In polycrystalline structures, lifetime can be limited by interface and grain-boundary recombination, and attaining high carrier concentration is complicated by morphology.

AB - CdTe cell efficiencies have increased from 17% to 21% in the past three years and now rival polycrystalline Si [1]. Research is now targeting 25% to displace Si, attain costs less than 40 cents/W, and reach grid parity. Recent efficiency gains have come largely from greater photocurrent. There is still headroom to lower costs and improve performance by increasing open-circuit voltage (Voc) and fill factor. Record-efficiency CdTe cells have been limited to Voc < 880 mV, whereas GaAs can attain Voc of 1.10 V with a slightly smaller bandgap [2,3]. To overcome this barrier, we seek to understand and increase lifetime and carrier concentration in CdTe. In polycrystalline structures, lifetime can be limited by interface and grain-boundary recombination, and attaining high carrier concentration is complicated by morphology.

KW - cadmium compounds

KW - carrier concentration CdTe

KW - charge-carrier lifetime

KW - photovoltaic cells

KW - solar cells

KW - tellurium

KW - thin films

UR - https://www.scopus.com/pages/publications/84961627612

U2 - 10.1109/PVSC.2015.7356444

DO - 10.1109/PVSC.2015.7356444

M3 - Paper

AN - SCOPUS:84961627612

T2 - 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015

Y2 - 14 June 2015 through 19 June 2015

ER -

Resetting the Defect Chemistry in CdTe

Abstract

Conference

Bibliographical note

NLR Publication Number

Keywords

Access to Document

Other files and links

Fingerprint

Cite this