@article{dd5bfa2a1ab14e5087ddccdfc2f888e3,
title = "Removal of Stacking Faults in Ge Grown on Si Through Nanoscale Openings in Chemical SiO(2)",
keywords = "gallium arsenide, germanium, metal-organic vapor phase epitaxy, molecular beam epitaxy, silicon, silicon dioxide, stacking fault, threading dislocation",
author = "Darin Leonhardt and Josephine Sheng and Josephine Sheng and Jeffery Cederberg and Macolm Carroll and Qiming Li and Manuel Romero and Darius Kuciauskas and Daniel Friedman and Sang Han",
year = "2011",
doi = "10.1016/j.tsf.2011.05.044",
language = "American English",
volume = "519",
pages = "7664--7671",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier B.V.",
number = "22",
}