Abstract
We report on the remarkable stability of unmodified, epitaxially grown GaAs photocathodes during hydrogen evolution at-15 mA cm-2 in 3 M sulfuric acid electrolyte. Contrary to the perception regarding instability of III-V photoelectrodes, results here show virtually no performance degradation and minimal etching after 120 hours.
| Original language | American English |
|---|---|
| Pages (from-to) | 2831-2836 |
| Number of pages | 6 |
| Journal | Journal of Materials Chemistry A |
| Volume | 4 |
| Issue number | 8 |
| DOIs | |
| State | Published - 2016 |
Bibliographical note
Publisher Copyright:© 2016 The Royal Society of Chemistry.
NLR Publication Number
- NREL/JA-5900-65160
Keywords
- photoelectrochemical water splitting
- semiconductor photocorrosion
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