Quantitative Modelling of Nucleation Kinetics in Experiments for Poly-Si Growth on SiO2 by Hot-Wire Chemical Vapor Deposition

Quantitative Modelling of Nucleation Kinetics in Experiments for Poly-Si Growth on SiO2 by Hot-Wire Chemical Vapor Deposition

NREL

Research output: Contribution to conference › Paper

Original language	American English
Pages	208-211
Number of pages	4
State	Published - 2001
Event	11th Workshop on Crystalline Silicon Solar Cell Materials and Processes - Estes Park, Colorado Duration: 19 Aug 2001 → 22 Aug 2001

Conference

Conference	11th Workshop on Crystalline Silicon Solar Cell Materials and Processes
City	Estes Park, Colorado
Period	19/08/01 → 22/08/01

Bibliographical note

Work performed by California Institute of Technology, Pasadena, California

NLR Publication Number

NREL/CP-520-33886

Cite this

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title = "Quantitative Modelling of Nucleation Kinetics in Experiments for Poly-Si Growth on SiO2 by Hot-Wire Chemical Vapor Deposition",

author = "NREL",

note = "Work performed by California Institute of Technology, Pasadena, California; 11th Workshop on Crystalline Silicon Solar Cell Materials and Processes ; Conference date: 19-08-2001 Through 22-08-2001",

year = "2001",

language = "American English",

pages = "208--211",

}

TY - CONF

T1 - Quantitative Modelling of Nucleation Kinetics in Experiments for Poly-Si Growth on SiO2 by Hot-Wire Chemical Vapor Deposition

AU - NREL, null

N1 - Work performed by California Institute of Technology, Pasadena, California

PY - 2001

Y1 - 2001

M3 - Paper

SP - 208

EP - 211

T2 - 11th Workshop on Crystalline Silicon Solar Cell Materials and Processes

Y2 - 19 August 2001 through 22 August 2001

ER -