Proton and Deuteron Double Resonance Studies of Structural Differences Between Amorphous Si and Ge Films

Proton and Deuteron Double Resonance Studies of Structural Differences Between Amorphous Si and Ge Films

NREL

Research output: Contribution to conference › Paper

Original language	American English
Pages	741-745
Number of pages	5
State	Published - 1993
Event	Amorphous Silicon Technology - 1993: Materials Research Society Symposium - San Francisco, California Duration: 13 Apr 1993 → 16 Apr 1993

Conference

Conference	Amorphous Silicon Technology - 1993: Materials Research Society Symposium
City	San Francisco, California
Period	13/04/93 → 16/04/93

Bibliographical note

Work performed by Washington University, St. Louis, Missouri and Harvard University, Cambridge, Massachusetts

NLR Publication Number

ACNR/CP-14397

Cite this

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title = "Proton and Deuteron Double Resonance Studies of Structural Differences Between Amorphous Si and Ge Films",

author = "NREL",

note = "Work performed by Washington University, St. Louis, Missouri and Harvard University, Cambridge, Massachusetts; Amorphous Silicon Technology - 1993: Materials Research Society Symposium ; Conference date: 13-04-1993 Through 16-04-1993",

year = "1993",

language = "American English",

pages = "741--745",

}

TY - CONF

T1 - Proton and Deuteron Double Resonance Studies of Structural Differences Between Amorphous Si and Ge Films

AU - NREL, null

N1 - Work performed by Washington University, St. Louis, Missouri and Harvard University, Cambridge, Massachusetts

PY - 1993

Y1 - 1993

M3 - Paper

SP - 741

EP - 745

T2 - Amorphous Silicon Technology - 1993: Materials Research Society Symposium

Y2 - 13 April 1993 through 16 April 1993

ER -