Abstract
We report the growth and characterization of low-bandgap record-efficiency ZnO/CdS/CuInSe2 thin-film solar cells. The total area conversion efficiency for this cell is 14.5%. This result has been measured and confirmed at the National Renewable Energy Laboratory under standard reporting conditions (1000 W/m2, 25°C, AM1·5 Global). The improved performance of the CuInSe2 solar cell is primarily due to a high current density. Material and device characterization data are presented.
| Original language | American English |
|---|---|
| Pages (from-to) | 39-45 |
| Number of pages | 7 |
| Journal | Progress in Photovoltaics: Research and Applications |
| Volume | 12 |
| Issue number | 1 |
| DOIs | |
| State | Published - 2004 |
NLR Publication Number
- NREL/JA-520-34281
Keywords
- Admittance spectroscopy
- Copper indium diselenide
- CuInSe
- Grazing-angle incidence
- Photovoltaics
- Thin-film solar cells
- Three-stage process
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