Properties of Pulsed Laser Deposited CdSxTe1-x Films on Glass

Properties of Pulsed Laser Deposited CdSxTe1-x Films on Glass

NREL

Research output: Contribution to conference › Paper

Abstract

Interdiffusion of sulfur and tellurium across the CdS/CdTe interface is fundamentally important in the operation of CdTe solar cells. However, the properties of the resulting alloy semiconductor, CdSxTe1-x, are not well understood. We have prepared films of this ternary material by pulsed excimer laser deposition (PLD) across the alloy range. These films were examined by x-ray diffraction,wavelenth dispersive x-ray spectroscopy, optical absorption, and Raman scattering to determine the influence of sulfur content on the crystal structure, lattice constant, energy gap, and vibrational mode behavior.

Original language	American English
Pages	367-371
Number of pages	5
State	Published - 1996
Event	Thin Films for Photovoltaic and Related Device Applications: Materials Research Society Symposium - San Francisco, California Duration: 8 Apr 1996 → 11 Apr 1996

Conference

Conference	Thin Films for Photovoltaic and Related Device Applications: Materials Research Society Symposium
City	San Francisco, California
Period	8/04/96 → 11/04/96

Bibliographical note

Work performed by University of Toledo, Toledo, Ohio

NLR Publication Number

NREL/CP-23038

Cite this

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title = "Properties of Pulsed Laser Deposited CdSxTe1-x Films on Glass",

abstract = "Interdiffusion of sulfur and tellurium across the CdS/CdTe interface is fundamentally important in the operation of CdTe solar cells. However, the properties of the resulting alloy semiconductor, CdSxTe1-x, are not well understood. We have prepared films of this ternary material by pulsed excimer laser deposition (PLD) across the alloy range. These films were examined by x-ray diffraction,wavelenth dispersive x-ray spectroscopy, optical absorption, and Raman scattering to determine the influence of sulfur content on the crystal structure, lattice constant, energy gap, and vibrational mode behavior.",

author = "NREL",

note = "Work performed by University of Toledo, Toledo, Ohio; Thin Films for Photovoltaic and Related Device Applications: Materials Research Society Symposium ; Conference date: 08-04-1996 Through 11-04-1996",

year = "1996",

language = "American English",

pages = "367--371",

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TY - CONF

T1 - Properties of Pulsed Laser Deposited CdSxTe1-x Films on Glass

AU - NREL, null

N1 - Work performed by University of Toledo, Toledo, Ohio

PY - 1996

Y1 - 1996

N2 - Interdiffusion of sulfur and tellurium across the CdS/CdTe interface is fundamentally important in the operation of CdTe solar cells. However, the properties of the resulting alloy semiconductor, CdSxTe1-x, are not well understood. We have prepared films of this ternary material by pulsed excimer laser deposition (PLD) across the alloy range. These films were examined by x-ray diffraction,wavelenth dispersive x-ray spectroscopy, optical absorption, and Raman scattering to determine the influence of sulfur content on the crystal structure, lattice constant, energy gap, and vibrational mode behavior.

AB - Interdiffusion of sulfur and tellurium across the CdS/CdTe interface is fundamentally important in the operation of CdTe solar cells. However, the properties of the resulting alloy semiconductor, CdSxTe1-x, are not well understood. We have prepared films of this ternary material by pulsed excimer laser deposition (PLD) across the alloy range. These films were examined by x-ray diffraction,wavelenth dispersive x-ray spectroscopy, optical absorption, and Raman scattering to determine the influence of sulfur content on the crystal structure, lattice constant, energy gap, and vibrational mode behavior.

M3 - Paper

SP - 367

EP - 371

T2 - Thin Films for Photovoltaic and Related Device Applications: Materials Research Society Symposium

Y2 - 8 April 1996 through 11 April 1996

ER -

Properties of Pulsed Laser Deposited CdSxTe1-x Films on Glass

Abstract

Conference

Bibliographical note

NLR Publication Number

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Cite this