Progress Towards a 30% Efficient GaInP/Si Tandem Solar Cells

Stephanie Essig; Scott Ward; Myles A. Steiner; Daniel J. Friedman; John F. Geisz; Paul Stradins; David L. Young

doi:10.1016/j.egypro.2015.07.066

Progress Towards a 30% Efficient GaInP/Si Tandem Solar Cells

Chemistry and Nanoscience

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

80 Scopus Citations

Abstract

The performance of dual-junction solar cells with a Si bottom cell has been investigated both theoretically and experimentally. Simulations show that adding a top junction with an energy bandgap of 1.6 -1.9 eV to a standard silicon solar cell enables efficiencies over 38%. Currently, top junctions of GaInP (1.8 eV) are the most promising as they can achieve 1-sun efficiencies of 20.8% [1]. We fabricated mechanically stacked, four terminal GaInP/Si tandem solar cells using a transparent adhesive between the subcells. These tandem devices achieved an efficiency of 27% under AM1.5 g spectral conditions. Higher efficiencies can be achieved by using an improved Si-bottom cell and by optimizing the dual-junction device for long-wavelength light and luminescent coupling between the two junctions.

Original language	American English
Pages (from-to)	464-469
Number of pages	6
Journal	Energy Procedia
Volume	77
DOIs	https://doi.org/10.1016/j.egypro.2015.07.066 https://doi.org/10.1016/j.egypro.2015.07.066
State	Published - 2015
Event	5th International Conference on Silicon Photovoltaics, SiliconPV 2015 - Konstanz, Germany Duration: 25 Mar 2015 → 27 Mar 2015

Bibliographical note

Publisher Copyright:
© 2015 The Authors.

NLR Publication Number

NREL/JA-5J00-64775

Keywords

III-V on Si
tandem solar cells

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title = "Progress Towards a 30\% Efficient GaInP/Si Tandem Solar Cells",

abstract = "The performance of dual-junction solar cells with a Si bottom cell has been investigated both theoretically and experimentally. Simulations show that adding a top junction with an energy bandgap of 1.6 -1.9 eV to a standard silicon solar cell enables efficiencies over 38\%. Currently, top junctions of GaInP (1.8 eV) are the most promising as they can achieve 1-sun efficiencies of 20.8\% [1]. We fabricated mechanically stacked, four terminal GaInP/Si tandem solar cells using a transparent adhesive between the subcells. These tandem devices achieved an efficiency of 27\% under AM1.5 g spectral conditions. Higher efficiencies can be achieved by using an improved Si-bottom cell and by optimizing the dual-junction device for long-wavelength light and luminescent coupling between the two junctions.",

keywords = "III-V on Si, tandem solar cells",

author = "Stephanie Essig and Scott Ward and Steiner, \{Myles A.\} and Friedman, \{Daniel J.\} and Geisz, \{John F.\} and Paul Stradins and Young, \{David L.\}",

note = "Publisher Copyright: {\textcopyright} 2015 The Authors.; 5th International Conference on Silicon Photovoltaics, SiliconPV 2015 ; Conference date: 25-03-2015 Through 27-03-2015",

year = "2015",

doi = "10.1016/j.egypro.2015.07.066",

language = "American English",

volume = "77",

pages = "464--469",

journal = "Energy Procedia",

issn = "1876-6102",

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TY - JOUR

T1 - Progress Towards a 30% Efficient GaInP/Si Tandem Solar Cells

AU - Essig, Stephanie

AU - Ward, Scott

AU - Steiner, Myles A.

AU - Friedman, Daniel J.

AU - Geisz, John F.

AU - Stradins, Paul

AU - Young, David L.

PY - 2015

Y1 - 2015

N2 - The performance of dual-junction solar cells with a Si bottom cell has been investigated both theoretically and experimentally. Simulations show that adding a top junction with an energy bandgap of 1.6 -1.9 eV to a standard silicon solar cell enables efficiencies over 38%. Currently, top junctions of GaInP (1.8 eV) are the most promising as they can achieve 1-sun efficiencies of 20.8% [1]. We fabricated mechanically stacked, four terminal GaInP/Si tandem solar cells using a transparent adhesive between the subcells. These tandem devices achieved an efficiency of 27% under AM1.5 g spectral conditions. Higher efficiencies can be achieved by using an improved Si-bottom cell and by optimizing the dual-junction device for long-wavelength light and luminescent coupling between the two junctions.

AB - The performance of dual-junction solar cells with a Si bottom cell has been investigated both theoretically and experimentally. Simulations show that adding a top junction with an energy bandgap of 1.6 -1.9 eV to a standard silicon solar cell enables efficiencies over 38%. Currently, top junctions of GaInP (1.8 eV) are the most promising as they can achieve 1-sun efficiencies of 20.8% [1]. We fabricated mechanically stacked, four terminal GaInP/Si tandem solar cells using a transparent adhesive between the subcells. These tandem devices achieved an efficiency of 27% under AM1.5 g spectral conditions. Higher efficiencies can be achieved by using an improved Si-bottom cell and by optimizing the dual-junction device for long-wavelength light and luminescent coupling between the two junctions.

KW - III-V on Si

KW - tandem solar cells

UR - https://www.scopus.com/pages/publications/84948398011

U2 - 10.1016/j.egypro.2015.07.066

DO - 10.1016/j.egypro.2015.07.066

M3 - Article

AN - SCOPUS:84948398011

SN - 1876-6102

VL - 77

SP - 464

EP - 469

JO - Energy Procedia

JF - Energy Procedia

T2 - 5th International Conference on Silicon Photovoltaics, SiliconPV 2015

Y2 - 25 March 2015 through 27 March 2015

ER -

Progress Towards a 30% Efficient GaInP/Si Tandem Solar Cells

Abstract

Bibliographical note

NLR Publication Number

Keywords

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