Abstract
A process for the preparation of a semiconductor film. The process comprises depositing nanoparticles of a semiconductor material onto a substrate whose surface temperature during nanoparticle deposition thereon is sufficient to cause substantially simultaneous fusion of the nanoparticles to thereby coalesce with each other and effectuate film growth.
| Original language | American English |
|---|---|
| Patent number | 5,711,803 |
| State | Published - 1998 |
NLR Publication Number
- NREL/PT-24262
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