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Precipitate Dissolution and Gettering under Vacancy Injection in Silicon: Final Subcontract Report, 21 March 2006 - 15 January 2008

  • T.Y. Tan
  • , N. Li
    • Duke University

    Research output: NLR › Subcontract Report

    Abstract

    This paper summarizes the mechanisms of vacancy injection, radiation-enhanced solubility, and radiation-enhanced diffusion of vacancies and metal impurity atoms in silicon.
    Original languageAmerican English
    PublisherNational Laboratory of the Rockies (NLR)
    Number of pages9
    StatePublished - 2008

    Bibliographical note

    Work performed by Duke University, Durham, North Carolina

    NLR Publication Number

    • NREL/SR-520-44088

    Keywords

    • gettering
    • metal impurity atoms
    • multicrystalline silicon vacancy injection
    • optical processing
    • precipitate dissolution
    • PV
    • radiation-enhanced diffusion
    • radiation-enhanced solubility

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