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Polarized Band-Edge Photoluminescence and Ordering in Ga0.52In0.48P

  • National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

171 Scopus Citations

Abstract

We present the first experimental evidence for the spontaneous breaking of cubic symmetry in the band structure of films of Ga0.52In0.48P grown by organometallic vapor-phase epitaxy on (100) GaAs substrates. We show how this effect is related to the spontaneous ordering of the alloy, and its correlation with the anomalous lowering of the band gap observed in these films.

Original languageAmerican English
Pages (from-to)2108-2111
Number of pages4
JournalPhysical Review Letters
Volume63
Issue number19
DOIs
StatePublished - 1989

NLR Publication Number

  • ACNR/JA-212-11037

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