Photoluminescence Studies on Cu and O Defects in Crystalline and Thin-Film CdTe

Caroline R. Corwine; Timothy A. Gessert; James R. Sites; Wyatt K. Metzger; Pat Dippo; Jingbo Li; Anna Duda; Glenn Teeter

doi:10.1557/proc-865-f5.24

Photoluminescence Studies on Cu and O Defects in Crystalline and Thin-Film CdTe

Caroline R. Corwine
, Timothy A. Gessert
, James R. Sites
, Wyatt K. Metzger
, Pat Dippo
, Jingbo Li
, Anna Duda
, Glenn Teeter

Materials Science

Colorado State University
National Renewable Energy Laboratory

Research output: Contribution to conference › Paper › peer-review

Abstract

Polycrystalline thin-film CdTe is one of the leading materials used in photovoltaic solar cells. One way to improve device performance and stability is through understanding how various process steps alter defect states in the CdTe layer. Low-temperature photoluminescence (PL) studies show a 1.456-eV PL peak in single-crystal CdTe that is likely due to a Cu_i-O _Te defect complex. A similar peak, observed in as-deposited glass/SnO₂:F/CdS/CdTe thin-film structures, strongly suggests a common origin. The 1.456-eV peak is also seen in a thin-film sample after performing the CdCl₂ treatment needed for high efficiencies.

Original language	American English
Pages	197-202
Number of pages	6
DOIs	https://doi.org/10.1557/proc-865-f5.24
State	Published - 2005
Event	Thin-Film Compound Semiconductor Photovoltaics: Materials Research Society Symposium - San Francisco, California Duration: 29 Mar 2005 → 1 Apr 2005

Conference

Conference	Thin-Film Compound Semiconductor Photovoltaics: Materials Research Society Symposium
City	San Francisco, California
Period	29/03/05 → 1/04/05

NLR Publication Number

NREL/CP-520-39718

Access to Document

10.1557/proc-865-f5.24

Cite this

Corwine, C. R., Gessert, T. A., Sites, J. R., Metzger, W. K., Dippo, P., Li, J., Duda, A., & Teeter, G. (2005). Photoluminescence Studies on Cu and O Defects in Crystalline and Thin-Film CdTe. 197-202. Paper presented at Thin-Film Compound Semiconductor Photovoltaics: Materials Research Society Symposium, San Francisco, California. https://doi.org/10.1557/proc-865-f5.24

@conference{385c4cd5f49d47308599eff053140239,

title = "Photoluminescence Studies on Cu and O Defects in Crystalline and Thin-Film CdTe",

abstract = "Polycrystalline thin-film CdTe is one of the leading materials used in photovoltaic solar cells. One way to improve device performance and stability is through understanding how various process steps alter defect states in the CdTe layer. Low-temperature photoluminescence (PL) studies show a 1.456-eV PL peak in single-crystal CdTe that is likely due to a Cui-O Te defect complex. A similar peak, observed in as-deposited glass/SnO2:F/CdS/CdTe thin-film structures, strongly suggests a common origin. The 1.456-eV peak is also seen in a thin-film sample after performing the CdCl2 treatment needed for high efficiencies.",

author = "Corwine, \{Caroline R.\} and Gessert, \{Timothy A.\} and Sites, \{James R.\} and Metzger, \{Wyatt K.\} and Pat Dippo and Jingbo Li and Anna Duda and Glenn Teeter",

year = "2005",

doi = "10.1557/proc-865-f5.24",

language = "American English",

pages = "197--202",

note = "Thin-Film Compound Semiconductor Photovoltaics: Materials Research Society Symposium ; Conference date: 29-03-2005 Through 01-04-2005",

}

Corwine, CR, Gessert, TA, Sites, JR, Metzger, WK, Dippo, P, Li, J, Duda, A & Teeter, G 2005, 'Photoluminescence Studies on Cu and O Defects in Crystalline and Thin-Film CdTe', Paper presented at Thin-Film Compound Semiconductor Photovoltaics: Materials Research Society Symposium, San Francisco, California, 29/03/05 - 1/04/05 pp. 197-202. https://doi.org/10.1557/proc-865-f5.24

TY - CONF

T1 - Photoluminescence Studies on Cu and O Defects in Crystalline and Thin-Film CdTe

AU - Corwine, Caroline R.

AU - Gessert, Timothy A.

AU - Sites, James R.

AU - Metzger, Wyatt K.

AU - Dippo, Pat

AU - Li, Jingbo

AU - Duda, Anna

AU - Teeter, Glenn

PY - 2005

Y1 - 2005

N2 - Polycrystalline thin-film CdTe is one of the leading materials used in photovoltaic solar cells. One way to improve device performance and stability is through understanding how various process steps alter defect states in the CdTe layer. Low-temperature photoluminescence (PL) studies show a 1.456-eV PL peak in single-crystal CdTe that is likely due to a Cui-O Te defect complex. A similar peak, observed in as-deposited glass/SnO2:F/CdS/CdTe thin-film structures, strongly suggests a common origin. The 1.456-eV peak is also seen in a thin-film sample after performing the CdCl2 treatment needed for high efficiencies.

AB - Polycrystalline thin-film CdTe is one of the leading materials used in photovoltaic solar cells. One way to improve device performance and stability is through understanding how various process steps alter defect states in the CdTe layer. Low-temperature photoluminescence (PL) studies show a 1.456-eV PL peak in single-crystal CdTe that is likely due to a Cui-O Te defect complex. A similar peak, observed in as-deposited glass/SnO2:F/CdS/CdTe thin-film structures, strongly suggests a common origin. The 1.456-eV peak is also seen in a thin-film sample after performing the CdCl2 treatment needed for high efficiencies.

UR - https://www.scopus.com/pages/publications/30544443938

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DO - 10.1557/proc-865-f5.24

M3 - Paper

AN - SCOPUS:30544443938

SP - 197

EP - 202

T2 - Thin-Film Compound Semiconductor Photovoltaics: Materials Research Society Symposium

Y2 - 29 March 2005 through 1 April 2005

ER -

Photoluminescence Studies on Cu and O Defects in Crystalline and Thin-Film CdTe

Abstract

Conference

NLR Publication Number

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