Abstract
The metalorganic chemical vapor deposition technique was used to study the photoluminescence (PL) spectra of interband transitions in GaInNAs/GaAs single quantum wells. It was found that the PL intensity increases as the In mole fraction increased from 0% to 25%, but degraded for samples with an In mole fraction of 30% or higher. An investigation on the peak position energies of the PL spectra as a function of the dimethylhydrazine DMH/III ratio was also presented.
| Original language | American English |
|---|---|
| Pages (from-to) | 514-516 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 82 |
| Issue number | 4 |
| DOIs | |
| State | Published - 2003 |
NLR Publication Number
- NREL/JA-520-33847
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