Photoelectronic Properties of Zinc Phosphide Crystals, Films and Heterojunctions; Quarterly Progress Report No. 10 for the Period July 1 - September 30, 1981

Photoelectronic Properties of Zinc Phosphide Crystals, Films and Heterojunctions; Quarterly Progress Report No. 10 for the Period July 1 - September 30, 1981

NREL

Research output: NLR › Subcontract Report

Original language	American English
Publisher	National Laboratory of the Rockies (NLR)
Number of pages	26
State	Published - 1981

Bibliographical note

Work performed by Department of Materials Science and Engineering, Stanford University, Stanford, California

NLR Publication Number

SERI/PR-1202-1-T2

Other Report Number

SERI/PR-1202-1-T2

Cite this

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title = "Photoelectronic Properties of Zinc Phosphide Crystals, Films and Heterojunctions; Quarterly Progress Report No. 10 for the Period July 1 - September 30, 1981",

author = "NREL",

note = "Work performed by Department of Materials Science and Engineering, Stanford University, Stanford, California",

year = "1981",

language = "American English",

publisher = "National Laboratory of the Rockies (NLR)",

address = "United States",

type = "Other",

}

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T1 - Photoelectronic Properties of Zinc Phosphide Crystals, Films and Heterojunctions; Quarterly Progress Report No. 10 for the Period July 1 - September 30, 1981

AU - NREL, null

N1 - Work performed by Department of Materials Science and Engineering, Stanford University, Stanford, California

PY - 1981

Y1 - 1981

M3 - Subcontract Report

PB - National Laboratory of the Rockies (NLR)

ER -