Photoelectronic Properties of Zinc Phosphide Crystals, Films and Heterojunctions; Quarterly Progress Report No. 9 for the Period April 1 - June 30, 1981

Photoelectronic Properties of Zinc Phosphide Crystals, Films and Heterojunctions; Quarterly Progress Report No. 9 for the Period April 1 - June 30, 1981

NREL

Research output: NLR › Subcontract Report

Original language	American English
Publisher	National Laboratory of the Rockies (NLR)
Number of pages	6
State	Published - 1981

Bibliographical note

Work performed by Department of Materials Science and Engineering, Stanford University, Stanford, California

NLR Publication Number

SERI/PR-1202-1-T1

Other Report Number

SERI/PR-1202-1-T1

Cite this

@misc{0706844e18a948f3848f5256c60702e4,

title = "Photoelectronic Properties of Zinc Phosphide Crystals, Films and Heterojunctions; Quarterly Progress Report No. 9 for the Period April 1 - June 30, 1981",

author = "NREL",

note = "Work performed by Department of Materials Science and Engineering, Stanford University, Stanford, California",

year = "1981",

language = "American English",

publisher = "National Laboratory of the Rockies (NLR)",

address = "United States",

type = "Other",

}

TY - GEN

T1 - Photoelectronic Properties of Zinc Phosphide Crystals, Films and Heterojunctions; Quarterly Progress Report No. 9 for the Period April 1 - June 30, 1981

AU - NREL, null

N1 - Work performed by Department of Materials Science and Engineering, Stanford University, Stanford, California

PY - 1981

Y1 - 1981

M3 - Subcontract Report

PB - National Laboratory of the Rockies (NLR)

ER -